M52S64322A-10BG ESMT [Elite Semiconductor Memory Technology Inc.], M52S64322A-10BG Datasheet - Page 41
M52S64322A-10BG
Manufacturer Part Number
M52S64322A-10BG
Description
512K x 32 Bit x 4 Banks Mobile Synchronous DRAM
Manufacturer
ESMT [Elite Semiconductor Memory Technology Inc.]
Datasheet
1.M52S64322A-10BG.pdf
(47 pages)
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ESMT
Active/Precharge Power Down Mode @ CAS Latency = 2, Burst Length = 4
*Note:
Elite Semiconductor Memory Technology Inc.
1. All banks should be in idle state prior to entering precharge power down mode.
2. CKE should be set high at least 1CLK + t
3. Can not violate minimum refresh specification. (64ms)
SS
prior to Row active command.
Publication Date: Aug. 2009
Revision: 1.3
M52S64322A
41/47
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