F25L32PA-100PAG ESMT [Elite Semiconductor Memory Technology Inc.], F25L32PA-100PAG Datasheet

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F25L32PA-100PAG

Manufacturer Part Number
F25L32PA-100PAG
Description
3V Only 32 Mbit Serial Flash Memory with Dual
Manufacturer
ESMT [Elite Semiconductor Memory Technology Inc.]
Datasheet

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Part Number:
F25L32PA-100PAG
Manufacturer:
NXP
Quantity:
32
ESMT
Flash
The F25L32PA is a 32Megabit, 3V only CMOS Serial Flash
memory device. The device supports the standard and Dual
Serial Peripheral Interface (SPI). ESMT’s memory devices
reliably store memory data even after 100,000 programming and
erase cycles.
The memory array can be organized into 16,384 programmable
pages of 256 byte each. 1 to 256 byte can be programmed at a
time with the Page Program instruction.
The device features sector erase architecture. The memory array
Elite Semiconductor Memory Technology Inc.
FEATURES
ORDERING INFORMATION
GENERAL DESCRIPTION
- Read max frequency: 33MHz
- Fast Read max frequency: 50MHz / 86MHz / 100MHz
- Fast Read Dual max frequency: 50MHz / 86MHz / 100MHz
- Active current: 35 mA
- Standby current: 30 μ A
- Deep Power Down current: 5 μ A
- 100,000 typical program/erase cycles
- 20 years Data Retention
- Byte programming time: 7 μ s (typical)
- Page programming time: 1.5 ms (typical)
Single supply voltage 2.7~3.6V
Standard and Dual SPI
Speed
Low power consumption
Reliability
Program
(100MHz / 172MHz / 200MHz equivalent Dual SPI)
F25L32PA –50PAG
F25L32PA –86PAG
F25L32PA –100PAG
F25L32PA –50PHG
F25L32PA –86PHG
F25L32PA –100PHG
Product ID
100MHz
100MHz
50MHz
86MHz
50MHz
86MHz
Speed
16 lead SOIC
16 lead SOIC
16 lead SOIC
8 lead SOIC
8 lead SOIC
8 lead SOIC
Package
200mil
200mil
200mil
300mil
300mil
300mil
3V Only 32 Mbit Serial Flash Memory with Dual
is divided into 1024 uniform sectors with 4K byte each; 64
uniform blocks with 64K byte each. Sectors can be erased
individually without affecting the data in other sectors. Blocks can
be erased individually without affecting the data in other blocks.
Whole chip erase capabilities provide the flexibility to revise the
data in the device. The device has Sector, Block or Chip Erase
but no page erase.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
- Chip erase time 25 sec (typical)
- Block erase time 1 sec (typical)
- Sector erase time 90 ms (typical)
- 256 byte per programmable page
- SPI Compatible: Mode 0 and Mode 3
Erase
Page Programming
Lockable 2K bytes OTP security sector
SPI Serial Interface
End of program or erase detection
Write Protect ( WP )
Hold Pin ( HOLD )
All Pb-free products are RoHS-Compliant
Comments
Pb-free
Pb-free
Pb-free
Pb-free
Pb-free
Pb-free
Publication Date: Mar. 2009
Revision: 1.0
F25L32PA
1/36

Related parts for F25L32PA-100PAG

F25L32PA-100PAG Summary of contents

Page 1

... F25L32PA –100PHG 100MHz GENERAL DESCRIPTION The F25L32PA is a 32Megabit, 3V only CMOS Serial Flash memory device. The device supports the standard and Dual Serial Peripheral Interface (SPI). ESMT’s memory devices reliably store memory data even after 100,000 programming and erase cycles. ...

Page 2

... SOIC HOLD SIO 1 Elite Semiconductor Memory Technology Inc F25L32PA HOLD 7 6 SCK SIO 0 SCK SIO Publication Date: Mar. 2009 Revision: 1 ...

Page 3

... The Write Protect ( WP ) pin is used to enable/disable BPL bit in the status register. To temporality stop serial communication with SPI flash memory without resetting the device. To provide power. Page Address Memory Array Page Buffer Y-Decoder Byte Address Latch / Counter Serial Interface HOLD (SIO ) (SIO ) 0 1 F25L32PA Functions Publication Date: Mar. 2009 Revision: 1.0 3/36 ...

Page 4

... ESMT SECTOR STRUCTURE Table 1: F25L32PA Sector Address Table Block Sector 1023 63 : 1008 1007 62 : 992 991 61 : 976 975 60 : 960 959 59 : 944 943 58 : 928 927 57 : 912 911 56 : 896 895 55 : 880 879 54 : 864 863 53 : 848 847 52 : 830 831 51 : 816 Elite Semiconductor Memory Technology Inc. ...

Page 5

... ESMT Table 1: F25L32PA Sector Address Table – Continued I Block Sector 815 50 : 800 799 49 : 784 783 48 : 768 767 47 : 752 751 46 : 736 735 45 : 720 719 44 : 704 703 43 : 688 687 42 : 672 671 41 : 656 655 40 : 640 639 39 : 624 623 38 : 608 Elite Semiconductor Memory Technology Inc. ...

Page 6

... ESMT Table 1: F25L32PA Sector Address Table – Continued II Block Sector 607 37 : 592 591 36 : 576 575 35 : 560 559 34 : 544 543 33 : 528 527 32 : 512 511 31 : 496 495 30 : 480 479 29 : 464 463 28 : 448 447 27 : 432 431 26 : 416 415 25 : 400 Elite Semiconductor Memory Technology Inc. ...

Page 7

... ESMT Table 1: F25L32PA Sector Address Table – Continued III Block Sector 399 24 : 384 383 23 : 368 367 22 : 352 351 21 : 336 335 20 : 320 319 19 : 304 303 18 : 288 287 17 : 272 271 16 : 256 255 15 : 240 239 14 : 224 223 13 : 208 207 12 : 192 Elite Semiconductor Memory Technology Inc. ...

Page 8

... ESMT Table 1: F25L32PA Sector Address Table – Continued IV Block Sector 191 11 : 176 175 10 : 160 159 9 : 144 143 8 : 128 127 7 : 112 111 Elite Semiconductor Memory Technology Inc. Sector Size Address range (Kbytes) 4KB 0BF000H – ...

Page 9

... BUSY The BUSY bit determines whether there is an internal Erase or Program operation in progress. A “1” for the BUSY bit indicates the device is busy with an operation in progress. A “0” indicates the device is ready for the next valid operation. F25L32PA Default at Read/Write Power-up 0 ...

Page 10

... BP2, BP1, BP0 bits as long high or the Block- Protection-Look (BPL) bit is 0. Chip Erase can only be executed if Block-Protection bits are all 0. After power-up, BP2, BP1 and BP0 are set to1. Elite Semiconductor Memory Technology Inc. Table 3: F25L32PA Block Protection Table Status Register Bit BP2 BP1 BP0 ...

Page 11

... The HOLD function is only available for Standard and Dual SPI operation ctive Ho ld Table 4: Conditions to Execute Write-Status- Register (WRSR) Instruction BPL Execute WRSR Instruction F25L32PA Hold condition. To resume A ctive Not Allowed Allowed Allowed Publication Date: Mar. 2009 Revision: 1.0 11/36 ...

Page 12

... D OUT Hi Hi Hi F25L32PA 1~3 Bus Cycle OUT IN OUT IN OUT Hi Hi OUT0 Hi Hi cont OUT0 Hi-Z A ...

Page 13

... OUT1 , Bus Cycle-3 F25L32PA 1~3 Bus Cycle OUT IN OUT IN OUT 20H X 16H - - 00H Hi-Z X 8CH X Hi-Z 01H Hi-Z X 15H ...

Page 14

... ADD. ADD. ADD. X MSB MSB F25L32PA - must remain active N+1 N+2 N+3 N ...

Page 15

... Fast Read Dual Output cycle. See Figure 4 for the Fast Read Dual Output sequence Dummy ADD. ADD. ADD. MSB HIGH IMPENANCE F25L32PA switches from In put to Ouput ...

Page 16

... 23- 16 15- 8 7-0 7 AxH F25L32PA – “AxH”, the next Fast Read Dual I/O instruction (after 7 0 –M ] are the value other than “AxH”, the next 7 0 –M ] before issuing normal instructions ...

Page 17

... After the Page Program cycle has 7 0 finished, the Write-Enable-Latch (WEL) bit in the Status Register is cleared to 0. See Figure 10 for the Page Program sequence. F25L32PA Publication Date: Mar. 2009 Revision: 1.0 17/36 ...

Page 18

... SPI instruction. See Figure 16 for the Mode Bit Reset instruction. Mode bit Reset for Dual I F25L32PA – “AxH”, the device will not recognize any standard SPI Publication Date: Mar. 2009 Revision: 1.0 – ...

Page 19

... Erase cycle. See Figure 18 for the Sector Erase sequence Address bits ADD. MSB MSB HIGH IMPENANCE F25L32PA - Most Significant address) are must be driven high before the IL IH for the completion of the ...

Page 20

... CE . See Figure 20 for the RDSR instruction sequence HIGH IMPEDANCE Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 MSB Status Register Data Out F25L32PA for the completion of the internal self-timed Publication Date: Mar. 2009 Revision: 1.0 20/36 ...

Page 21

... CE must be driven high before the WRDI instruction is executed MODE3 SCK MODE0 04 SI MSB HIGH IMPENANCE SO instruction. CE must be driven low before the EWSR instruction is entered and must be driven high before the EWSR instruction is executed. F25L32PA Publication Date: Mar. 2009 Revision: 1.0 21/36 ...

Page 22

... WRSR command will ignore the input data and lock down the secured OTP sector (OTP_lock bit =1). To exit secured OTP mode, user must execute WRDI command. RES can be used to verify the secured OTP status as shown in Table 6. F25L32PA Publication Date: Mar. 2009 Revision: 1.0 22/36 ...

Page 23

... RES1 The instruction is executed while an Erase, Program or WRSR cycle is in progress is ignored and has no effect on the cycle in progress. In OTP mode, user also can execute RES to confirm the status of OTP. F25L32PA ). See Figure 25 for the Deep Power SB1 T DP Deep Power Down Current ...

Page 24

... SS 3 Dummy Bytes Table 6: Electronic Signature Data Mode Normal In secured OTP mode & non lock down (OTP_lock =0) In secured OTP mode & lock down (OTP_lock =1) F25L32PA T RES1 Standby Current (I ) SB2 Electronic-Signature Data Out MSB ...

Page 25

... ID is shifted out on the SO pin. Byte1, 8CH, identifies the manufacturer as ESMT. Byte2, 20H, identifies the memory type as SPI Flash. Byte3, 16H, identifies the device as F25L32PA. The instruction sequence is shown in Figure 28 1415 1617 1819 2021 2627 2829 3031 ...

Page 26

... ESMT Read-ID (RDID) The Read-ID instruction (RDID) identifies the devices as F25L32PA and manufacturer as ESMT. This command is backward compatible to all ESMT SPI devices and should be used as default device identification when multiple versions of ESMT SPI devices are used in one design. The device information can be read from executing an 8-bit command, 90H, ...

Page 27

... A Limits Min Max Standard 15 Dual 18 Standard 20 Dual 23 Standard 23 Dual 25 Standard 25 Dual 0.8 0 0.2 V -0.2 DD F25L32PA Value Unit ℃ Test Condition Unit mA CE =0 SO=open =0 SO=open =0 SO=open =0 SO=open DD DD ...

Page 28

... MHz, other pins open) Description Normal 33 MHz Min Max 100 F25L32PA Unit Test Method mA JEDEC Standard 78 Minimum 10 10 Test Condition OUT Fast 50 MHz Fast 86 MHz Min Max Min Max 50 86 ...

Page 29

... Symbol 2 Typ Max T 90 300 1 100 100,000 - 20 - F25L32PA Fast 86 MHz Fast 100 MHz Min Max Min Max 1.8 1.8 Unit Cycles Years Publication Date: Mar. 2009 Revision: 1.0 ...

Page 30

... ESMT Figure 30: Serial Input Timing Diagram Figure 31: Serial Output Timing Diagram Elite Semiconductor Memory Technology Inc. F25L32PA Publication Date: Mar. 2009 Revision: 1.0 30/36 ...

Page 31

... Elite Semiconductor Memory Technology Inc Program, Erase and Write command is ignored CE must track V CC (min) T Reset VSL State PUW Threshold WI Symbol Min. T 200 VSL T PUW F25L32PA Read command Device is fully is allowed accessible Time Max. Unit Publication Date: Mar. 2009 Revision: 1.0 31/36 ...

Page 32

... Figure 34: AC Input/Output Reference Waveforms Figure 35: A Test Load Example Elite Semiconductor Memory Technology Inc. Input timing reference level 0.7VCC Measurement 0.3VCC Note : Input pulse rise and fall time are <5ns F25L32PA Output timing reference level AC 0.5VCC Level Publication Date: Mar. 2009 Revision: 1.0 32/36 ...

Page 33

... E 0.002 0.006 0.010 E 1 0.067 0.071 0.075 L 0.014 0.016 0.020 e 0.007 0.008 0.010 L 1 θ 0.202 0.206 0.210 F25L32PA L L1 DETAIL "X" Dimension in mm Dimension in inch Min Norm Max Min Norm 7.70 7.90 8.10 0.303 0.311 5.18 5.28 5.38 0.204 0.208 0.50 0.65 0.80 0.020 0.026 1 ...

Page 34

... E 0.004 --- 0.012 E 1 0.081 --- --- L 0.012 --- 0.020 e θ 0.008 --- 0.013 0.400 0.406 0.413 F25L32PA GAUGE PLANE L DETAIL "X" "X" Dimension in mm Dimension in inch Min Norm Max Min Norm 10.30 BSC 0.406 BSC 7.50 BSC 0.295 BSC 0.40 --- 1.27 0.016 1.27 BSC 0.050 BSC ° 0 ° ...

Page 35

... Elite Semiconductor Memory Technology Inc. Date 2008.11.21 Original 1. Modify the specification of T 2009.01.09 2. Modify headline 1. Add Dual SPI instructions 2. Modify the memory type of JEDEC Read-ID data from 2009.03.16 40H to 20H 3. Delete the rating of Temperature Under Bias F25L32PA Description CE Publication Date: Mar. 2009 Revision: 1.0 35/36 ...

Page 36

... If products described here are to be used for such kinds of application, purchaser must do its own quality assurance testing appropriate to such applications. Elite Semiconductor Memory Technology Inc. Important Notice F25L32PA Publication Date: Mar. 2009 Revision: 1.0 36/36 ...

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