M52S64322A-10BG ESMT [Elite Semiconductor Memory Technology Inc.], M52S64322A-10BG Datasheet - Page 39
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M52S64322A-10BG
Manufacturer Part Number
M52S64322A-10BG
Description
512K x 32 Bit x 4 Banks Mobile Synchronous DRAM
Manufacturer
ESMT [Elite Semiconductor Memory Technology Inc.]
Datasheet
1.M52S64322A-10BG.pdf
(47 pages)
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ESMT
Read interrupted by Precharge Command & Read Burst Stop Cycle @ Burst Length = Full page
*Note:
Elite Semiconductor Memory Technology Inc.
1. About the valid DQs after burst stop, it is same as the case of RAS interrupt.
2. Burst stop is valid at every burst length.
Both cases are illustrated above timing diagram. See the label 1, 2 on them.
But at burst write, Burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of “Full page write burst stop cycles”.
Publication Date: Aug. 2009
Revision: 1.3
M52S64322A
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