HYB18T512160AF-3 QIMONDA [Qimonda AG], HYB18T512160AF-3 Datasheet - Page 28

• Manufacturer Part Number: HYB18T512160AF-3
• Description: 512-Mbit Double-Data-Rate-Two SDRAM
• Manufacturer: QIMONDA [Qimonda AG]

5.2
This chapter describes the DC characteristics.
1)
2) The value of
3) Peak to peak ac noise on
4)
1)
2) Measurement Definition for
1) all other pins not under test = 0 V
2) DQ’s, LDQS, LDQS, UDQS, UDQS, DQS, DQS, RDQS, RDQS are disabled and ODT is turned off
Rev. 1.71, 2007-01
03062006-CPCN-4867
Symbol
V
V
V
V
V
Parameter / Condition
Termination resistor impedance value for
EMRS(1)[A6,A2] = [0,1]; 75 Ohm
Termination resistor impedance value for
EMRS(1)[A6,A2] =[1,0]; 150 Ohm
Termination resistor impedance value for
EMRS(1)(A6,A2)=[1,1]; 50 Ohm
Deviation of
Symbol
IIL
IOL
DD
DDDL
DDQ
REF
TT
V
be about 0.5 ×
V
must track variations in die dc level of
Rtt(eff) = (
Measurement Definition for Rtt(eff): Apply
1) x 100%
DDQ
TT
is not applied directly to the device.
tracks with
V
V
IH(ac)
Parameter / Condition
Input Leakage Current; any input 0 V <
Output Leakage Current; 0 V <
M
V
Parameter
Supply Voltage
Supply Voltage for DLL
Supply Voltage for Output
Input Reference Voltage
Termination Voltage
REF
with respect to
V
DDQ
–
V
may be selected by the user to provide optimum noise margin in the system. Typically the value of
DD
V
DC Characteristics
IL(ac)
,
of the transmitting device and
V
DDDL
)
I
V
(I(
REF
V
tracks with
V
M
IHac
: Turn ODT on and measure voltage (
may not exceed ± 2%
V
) –
DDQ
I
(
V
V
/ 2
ILac
V
REF
V
DD
TT
)).
.
V
. AC parameters are measured with
is a system supply for signal termination resistors, is expected to be set equal to
IH(ac)
V
and
OUT
V
Rating
Min.
1.7
1.7
1.7
0.49 ×
V
REF
REF
V
V
<
REF
IL(ac)
is expected to track variations in
V
V
– 0.04
DDQ
IN
(dc)
Symbol
Rtt1(eff)
Rtt2(eff)
Rtt3(eff)
delta
V
to test pin separately, then measure current
<
DDQ
V
28
DD
V
Recommended DC Operating Conditions (SSTL_18)
M
V
M
) at test pin (midpoint) with no load: delta
Typ.
1.8
1.8
0.5 ×
V
1.8
REF
Min.
60
120
40
–6.00
V
V
DDQ
DD
,
HYB18T512[40/80/16]0AF(L)–[3/3S/3.7/5]
V
DDQ
Nom.
75
150
50
—
Input and Output Leakage Currents
V
ODT DC Electrical Characteristics
Min.
–2
–5
and
DDQ
Max.
1.9
1.9
1.9
0.51 ×
V
REF
.
V
DDDL
+ 0.04
V
Max.
90
180
60
+ 6.00
tied together.
DDQ
Max.
+2
+5
I
(
V
512-Mbit DDR2 SDRAM
IHac
) and
Internet Data Sheet
V
Unit
Ω
Ω
Ω
%
Unit
V
V
V
V
V
M
Unit
µA
µA
I
= ((2 x
V
(
TABLE 23
TABLE 24
TABLE 25
V
REF
ILac
is expected to
) respectively.
V
V
Note
1)
1)
1)
2)3)
4)
Note
1)
1)
1)
2)
M
REF
Note
1)
2)
/
V
, and
DDQ
) –