M45PE10-VMN6 STMICROELECTRONICS [STMicroelectronics], M45PE10-VMN6 Datasheet - Page 23

• Manufacturer Part Number: M45PE10-VMN6
• Description: 1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Table 6. Power-Up Timing and V
Note: 1. These parameters are characterized only, over the temperature range –40°C to +85°C.
INITIAL DELIVERY STATE
The device is delivered with the memory array
erased: all bits are set to 1 (each byte contains
FFh). All usable Status Register bits are 0.
MAXIMUM RATING
Stressing the device outside the ratings listed in
Table 7.
vice. These are stress ratings only, and operation
of the device at these, or any other conditions out-
side those indicated in the Operating sections of
Table 7. Absolute Maximum Ratings
Note: 1. Compliant with JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST ECOPACK
Symbol
t
t
V
PUW
VSL
Symbol
WI
2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 , R2=500 )
T
T
V
V
1
1
1
V
LEAD
STG
ESD
CC
the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU
IO
may cause permanent damage to the de-
V
Time delay before the first Write, Program or Erase instruction
Write Inhibit Voltage
CC
(min) to S low
Storage Temperature
Lead Temperature during Soldering
Input and Output Voltage (with respect to Ground)
Supply Voltage
Electrostatic Discharge Voltage (Human Body model)
WI
Threshold
Parameter
Parameter
this specification, is not implied. Exposure to Ab-
solute Maximum Rating conditions for extended
periods may affect device reliability. Refer also to
the STMicroelectronics SURE Program and other
relevant quality documents.
2
–2000
Min.
–0.6
–0.6
–65
See note
Min.
®
1.5
30
1
7191395 specification, and
Max.
2000
150
1
4.0
4.0
Max.
2.5
10
M45PE10
Unit
°C
°C
V
V
V
23/34
Unit
ms
µs
V