M45PE10-VMN6 STMICROELECTRONICS [STMicroelectronics], M45PE10-VMN6 Datasheet - Page 21

• Manufacturer Part Number: M45PE10-VMN6
• Description: 1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Release from Deep Power-down (RDP)
Once the device has entered the Deep Power-
down mode, all instructions are ignored except the
Release from Deep Power-down (RDP) instruc-
tion. Executing this instruction takes the device out
of the Deep Power-down mode.
The Release from Deep Power-down (RDP) in-
struction is entered by driving Chip Select (S) Low,
followed by the instruction code on Serial Data In-
put (D). Chip Select (S) must be driven Low for the
entire duration of the sequence.
The instruction sequence is shown in
The Release from Deep Power-down (RDP) in-
struction is terminated by driving Chip Select (S)
Figure 18. Release from Deep Power-down (RDP) Instruction Sequence
S
C
D
Q
High Impedance
0
1
2
Instruction
3
4
5
Figure
6
7
18..
Deep Power-down Mode
High. Sending additional clock cycles on Serial
Clock (C), while Chip Select (S) is driven Low,
cause the instruction to be rejected, and not exe-
cuted.
After Chip Select (S) has been driven High, fol-
lowed by a delay, t
Standby Power mode. Chip Select (S) must re-
main High at least until this period is over. The de-
vice waits to be selected, so that it can receive,
decode and execute instructions.
Any Release from Deep Power-down (RDP) in-
struction, while an Erase, Program or Write cycle
is in progress, is rejected without having any ef-
fects on the cycle that is in progress.
t
RDP
Stand-by Mode
RDP
, the device is put in the
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