k4j55323qf-gc Samsung Semiconductor, Inc., k4j55323qf-gc Datasheet - Page 42

• Manufacturer Part Number: k4j55323qf-gc
• Description: 256mbit Gddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4J55323QF-GC
TRUTH TABLE - CURRENT STATE BANK n
NOTES :
1. This table applies when CKEn-1 was HIGH and CKEn is HIGH (see TRUTH TABLE- CKE ) and after t
2. This table describes alternate bank operation, except where noted (i.e., the current state is for bank n and the
CURRENT STATE
met (if the previous state was self refresh).
commands shown are those allowed to be issued to bank m, assuming that bank m is in such a state that the given
command is allowable). Exceptions are covered in the notes below.
(Auto-Precharge
(Auto-Precharge
Auto-Precharge)
Auto-Precharge)
Row Activating,
Prechrging
Disabled)
Active, or
Disable)
Read
Read
Write
(With
Write
(With
Any
Idle
/CS
H
X
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
/RAS /CAS
X
H
H
X
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
H
H
H
H
H
H
H
H
H
H
H
X
X
L
L
L
L
L
L
L
L
L
L
L
/WE
H
H
H
H
H
H
H
H
H
H
H
H
X
X
L
L
L
L
L
L
L
L
L
L
DESELECT (NOP/ continue previous operation)
NO OPERATION (NOP/continue previous operation)
DATA TERMINATOR DISABLE
Any Command Otherwise Allowed to Bank m
ACTIVE (Select and activate row)
READ (Select column and start READ burst)
WRITE (Select Column and start WRITE burst)
PRECHARGE
ACTIVE (Select and activate row)
READ (Select column and start new READ burst)
WRITE (Select column and start WRITE burst)
PRECHARGE
ACTIVE (Select and activate row)
READ (Select column and start READ burst)
WRITE (Select column and start new WRITE burst)
PRECHARGE
ACTIVE (Select and activate row)
READ (Select column and start new READ burst)
WRITE (Select column and start WRITE burst)
PRECHARGE
ACTIVE (Select and activate row)
READ (Select column and start READ burst)
WRITE (Select column and start new WRITE burst)
PRECHARGE
- 42 -
- COMMAND TO BANK m
COMMAND/ ACTION
256M GDDR3 SDRAM
Rev 1.7 (Jan. 2005)
XSNR
has been
NOTES
6, 7
8
6
6
6
6
6
6
6
6
6