k4j55323qf-gc Samsung Semiconductor, Inc., k4j55323qf-gc Datasheet - Page 40

• Manufacturer Part Number: k4j55323qf-gc
• Description: 256mbit Gddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4J55323QF-GC
TRUTH TABLE - CURRENT STATE BANK n
NOTES :
1. This table applies when CKE
2. This table is bank-specific, except where noted (i.e., the current state is for a specific bank and the commands shown
3. Current state definitions :
4. The following states must not be interrupted by a command issued to the same bank. COMMAND INHIBIT or NOP
states. Allowable commands to the other bank are determined by its current state and truth table- current state bank n -
command to bank n. and according to truth table - current state bank n -command to bank m.
CURRENT STATE
(if the previous state was self refresh).
are those allowed to be issued to that bank when in that state). Exceptions are covered in the notes below.
commands, or allowable commands to the other bank should be issued on any clock edge occurring during these
(Auto-Precharge
(Auto-Precharge
Row Active
Disabled)
Disable)
Read
Write
Any
Idle
Row Activating : Starts with registration of an ACTIVE command and ends when t
Precharging : Starts with registration of a PRECHARGE command and ends when t
Row Active : A row in the bank has been activated, and t
Read : A READ burst has been initiated, with auto precharge disabled.
Write : A WRITE burst has been initiated, with auto precharge disabled.
Idle : The bank has been precharged, and t
/CS
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
No data bursts/accesses and no register accesses are in progress.
Once t
Once t
/RAS /CAS
X
H
H
H
H
H
H
H
H
L
L
L
L
L
L
n-1
RP
RCD
was HIGH and CKE
H
H
H
H
H
X
is met, the bank will be in the idle state.
L
L
L
L
L
L
L
L
L
is met, the bank will be in the :row active" state.
/WE
H
H
H
H
H
H
H
X
L
L
L
L
L
L
L
DESELECT (NOP/ continue previous operation)
NO OPERATION (NOP/continue previous operation)
DATA TERMINATOR DISABLE
ACTIVE (Select and activate row)
AUTO REFRESH
LOAD MODE REGISTER
READ (Select column and start READ burst)
WRITE (Select Column and start WRITE burst)
PRECHARGE (Deactivate row in bank or banks)
READ (Select column and start new READ burst)
WRITE (Select column and start WRITE burst)
PRECHARGE (Only after the READ burst is complete)
READ (Select column and start READ burst)
WRITE (Select column and start new WRITE burst)
PRECHARGE (Only after the WRITE burst is complete)
n
is HIGH (see CKE Truth Table) and after t
- 40 -
RP
- COMMAND TO BANK n
has been met.
RCD
COMMAND/ ACTION
has been met.
256M GDDR3 SDRAM
RCD
is met.
RP
Rev 1.7 (Jan. 2005)
XSNR
is met.
has been met
NOTES
10, 12
10, 11
8, 11
13
10
10
10
10
8
7
7
8