k4j55323qf-gc Samsung Semiconductor, Inc., k4j55323qf-gc Datasheet - Page 27

• Manufacturer Part Number: k4j55323qf-gc
• Description: 256mbit Gddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4J55323QF-GC
Nonconsecutive READ Bursts
COMMAND
ADDRESS
RDQS
NOTE
/CK
CK
DQ
:
1. DO n (or b) = data-out from column n (or column b).
2. Burst length = 4
3. Three subsequent elements of data-out appear in the programmed order following DQ n.
4. Three subpsequent elements of data-out appear in the programmed order following DQ b.
5. Shown with nominal t
6. Example applies when READ commands are issued to different devices or nonconsecutive READs.
7. RDQS will start driving high one half-clock cycle prior to the first falling edge of RDQS.
Bank a,
READ
Col n
T0
CL = 8
NOP
T7
AC
and t
DQSQ.
NOP
T8
DO
n
- 27 -
T8n
Bank a,
READ
Col b
T9
DON’T CARE
T9n
NOP
T10
256M GDDR3 SDRAM
TRANSITIONING DATA
NOP
T17
Rev 1.7 (Jan. 2005)
DO
b
T17n
NOP
T18