k4j55323qf-gc Samsung Semiconductor, Inc., k4j55323qf-gc Datasheet - Page 32

• Manufacturer Part Number: k4j55323qf-gc
• Description: 256mbit Gddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4J55323QF-GC
WRITE Burst
COMMAND
ADDRESS
t
t
t
DQSS
DQSS
DQSS
WDQS
WDQS
WDQS
NOTE
/CK
CK
DM
DM
DM
DQ
DQ
DQ
(NOM)
(MIN)
(MAX)
:
1. DI b = data-in for column b.
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. A burst of 4 is shown.
4. A8 is LOW with the WRITE command (auto precharge is disabled).
5. Write latency is set to 4
WRITE
Bank a,
Col b
T0
t
t
t
DQSS
DQSS
DQSS
NOP
T1
NOP
T2
- 32 -
NOP
T3
DON’T CARE
T3n
DI
b
NOP
DI
T4
b
DI
b
DI
256M GDDR3 SDRAM
b
T4n
DI
b
TRANSITIONING DATA
DI
b
DI
b
NOP
T5
DI
b
DI
b
Rev 1.7 (Jan. 2005)
DI
b
T5n
DI
b
DI
b
NOP
T6