k4j55323qf-gc Samsung Semiconductor, Inc., k4j55323qf-gc Datasheet - Page 30

• Manufacturer Part Number: k4j55323qf-gc
• Description: 256mbit Gddr3 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4J55323QF-GC
READ to PRECHARGE
COMMAND
ADDRESS
RDQS
/CK
CK
NOTE
DQ
:
1. DO n (or b) = data-out from column n (or column b).
2. Burst length = 4
3. Three subsequent elements of data-out appear in the programmed order following DQ n.
4. Read to precharge equals two clocks, which enables two data pairs of data-out.
5. Shown with nominal t
6. Example applies when READ commands are issued to different devices or nonconsecutive READs.
7. RDQS will start driving high one half-clock cycle prior to the first falling edge of RDQS.
Bank a,
READ
Col n
T0
AC
NOP
T1
and t
CL = 8
DQSQ.
Bank a
PRE
T2
- 30 -
DON’T CARE
NOP
T8
DO
n
T8n
t
RP
256M GDDR3 SDRAM
TRANSITIONING DATA
NOP
T9
Rev 1.7 (Jan. 2005)
T9n
Bank a,
T10
ACT
Row