k4b2g0846b Samsung Semiconductor, Inc., k4b2g0846b Datasheet - Page 43

• Manufacturer Part Number: k4b2g0846b
• Description: 2gb B-die Ddr3 Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

K4B2G04(08/16)46B
[ Table 45] DDR3-1333 Speed Bins
Intermal read command to first data
ACT to internal read or write delay time
PRE command period
ACT to ACT or REF command period
ACT to PRE command period
CL = 6
CL = 7
CL = 8
CL = 9
CL = 10
Supported CL Settings
Supported CWL Settings
Parameter
CL-nRCD-nRP
Speed
CWL = 5,6
CWL = 5,6
CWL = 5
CWL = 6
CWL = 7
CWL = 5
CWL = 6
CWL = 7
CWL = 5
CWL = 6
CWL = 7
CWL = 7
CWL = 7
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
Symbol
tRCD
tRAS
tRP
tRC
tAA
Page 43 of 61
(13.125)
(13.125)
(13.125)
(49.125)
1.875
1.875
13.5
13.5
13.5
49.5
min
2.5
1.5
1.5
36
5,9
5,9
5,9
5,9
(Optional) Note 5,9
DDR3-1333
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
(Optional)
9 -9 - 9
6,7,8,9
5,6,7
9*tREFI
<1.875
<1.875
max
<2.5
<2.5
3.3
20
-
-
-
2Gb DDR3 SDRAM
Rev. 1.0 December 2008
Units
nCK
nCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1,2,3,4,7
1,2,3,4,7
1,2,3,4,
1,2,3,4,
1,2,3,7
1,2,3,7
1,2,3,4
Note
1,2,3
8
4
4
4
4
4
5