k4b2g0846b Samsung Semiconductor, Inc., k4b2g0846b Datasheet - Page 35
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k4b2g0846b
Manufacturer Part Number
k4b2g0846b
Description
2gb B-die Ddr3 Sdram Specification
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K4B2G0846B.pdf
(61 pages)
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K4B2G04(08/16)46B
[Table 35] IDD2NT and IDDQ2NT Measurement - Loop Pattern
Note :
1. DM must be driven Low all the time. DQS, DQS are MID-LEVEL.
2. DQ signals are MID-LEVEL.
[Table 36] IDD4R and IDDQ4R Measurement - Loop Pattern
Note :
1. DM must be driven LOW all the time. DQS, DQS are used according to WR Commands, otherwise MID-LEVEL.
2. Burst Sequence driven on each DQ signal by Write Command. Outside burst operation, DQ signals are MID-LEVEL.
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
12-15
16-19
20-23
24-27
28-31
16-23
24-31
32-39
40-47
48-55
56-63
8-11
8-15
4-7
2,3
6,7
0
1
2
3
0
1
4
5
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 1
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 2
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 3
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 4
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 5
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 6
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 7
repeat Sub-Loop 0, but BA[2:0] = 1
repeat Sub-Loop 0, but BA[2:0] = 2
repeat Sub-Loop 0, but BA[2:0] = 3
repeat Sub-Loop 0, but BA[2:0] = 4
repeat Sub-Loop 0, but BA[2:0] = 5
repeat Sub-Loop 0, but BA[2:0] = 6
repeat Sub-Loop 0, but BA[2:0] = 7
D,D
D,D
RD
RD
D
D
D
D
D
D
1
1
1
1
0
1
1
0
1
1
0
0
1
1
1
0
1
1
0
1
Page 35 of 61
0
0
1
1
0
0
1
0
0
1
1
1
0
0
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0
1
1
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
00
00
00
00
00
00
00
00
00
00
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
2Gb DDR3 SDRAM
Rev. 1.0 December 2008
0
0
F
F
0
0
0
F
F
F
0
0
0
0
0
0
0
0
0
0
00000000
00110011
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