k4b2g0846b Samsung Semiconductor, Inc., k4b2g0846b Datasheet - Page 32
![no-image](/images/no-image-200.jpg)
k4b2g0846b
Manufacturer Part Number
k4b2g0846b
Description
2gb B-die Ddr3 Sdram Specification
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K4B2G0846B.pdf
(61 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
k4b2g0846b-HCF7
Manufacturer:
SAMSUNG
Quantity:
985
Company:
Part Number:
k4b2g0846b-HCH9
Manufacturer:
SAMSUNG
Quantity:
11 581
Company:
Part Number:
k4b2g0846b-HCH9
Manufacturer:
TI
Quantity:
19
Company:
Part Number:
k4b2g0846b-HCK0
Manufacturer:
SAMSUNG
Quantity:
11 586
Company:
Part Number:
k4b2g0846b-HYF7
Manufacturer:
SAMSUNG
Quantity:
1 200
K4B2G04(08/16)46B
Figure 19 : Measurement Setup and Test Load for IDD and IDDQ (optional) Measurements
Figure 20 :Correlation from simulated Channel IO Power to actual Channel IO Power supported by IDDQ Measurement.
[Note: DIMM level Output test load condition may be different from above ]
Application specific
Channel IO Power
memory channel
RESET
CK/CK
CKE
CS
RAS, CAS, WE
A, BA
ODT
ZQ
environment
Channel
IO Power
Simulation
Number
V
V
DD
SS
I
DD
Correction
Page 32 of 61
TDQS, TDQS
V
V
DQS, DQS
DDQ
SSQ
DQ, DM,
I
DDQ
(optional)
Simulation
IDDQ
R
TT
= 25 Ohm
IDDQ
Test Load
V
DDQ
/2
2Gb DDR3 SDRAM
Rev. 1.0 December 2008
Correlation
Measurement
IDDQ