k4b2g0846b Samsung Semiconductor, Inc., k4b2g0846b Datasheet - Page 4

• Manufacturer Part Number: k4b2g0846b
• Description: 2gb B-die Ddr3 Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

K4B2G04(08/16)46B
10.0 Idd Specification Parameters and Test Conditions ...............................................................29
11.0 2Gb DDR3 SDRAM B-die IDD Spec Table ...............................................................................38
12.0 Input/Output Capacitance ........................................................................................................40
13.0 Electrical Characteristics and AC timing for DDR3-800 to DDR3-1600 ...............................41
14.0 Timing Parameters by Speed Grade .......................................................................................46
10.1 IDD Measurement Conditions
10.2 IDD Specifications definition
13.1 Clock specification
13.2 Refresh Parameters by Device Density
13.3 Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin
14.1 Jitter Notes
14.2 Timing Parameter Notes
14.3 Address / Command Setup, Hold and Derating:
14.4 Data Setup, Hold and Slew Rate Derating:
13.1.1 Definition for tCK (avg)
13.1.2 Definition for tCK (abs)
13.1.3 Definition for tCH(avg) and tCL(avg)
13.1.4 Definition for note for tJIT(per), tJIT(per,lck)
13.1.5 Definition for tJIT(cc), tJIT(cc,lck)
13.1.6 Definition for tERR(nper)
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2Gb DDR3 SDRAM
Rev. 1.0 December 2008