k4b2g0846b Samsung Semiconductor, Inc., k4b2g0846b Datasheet - Page 40

• Manufacturer Part Number: k4b2g0846b
• Description: 2gb B-die Ddr3 Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

K4B2G04(08/16)46B
12.0 Input/Output Capacitance
[ Table 41 ] Input / Output Capacitance
Note :
1. Although the DM, TDQS and TDQS pins have different functions, the loading matches DQ and DQS
2. This parameter is not subject to production test. It is verified by design and characterization.
3. This parameter applies to monolithic devices only; stacked/dual-die devices are not covered here
4. Absolute value of CCK-CCK
5. Absolute value of CIO(DQS)-CIO(DQS)
6. CI applies to ODT, CS, CKE, A0-A15, BA0-BA2, RAS, CAS, WE.
7. CDI_CTRL applies to ODT, CS and CKE
8. CDI_CTRL=CI(CTRL)-0.5*(CI(CLK)+CI(CLK))
9. CDI_ADD_CMD applies to A0-A15, BA0-BA2, RAS, CAS and WE
10. CDI_ADD_CMD=CI(ADD_CMD) - 0.5*(CI(CLK)+CI(CLK))
11. CDIO=CIO(DQ,DM) - 0.5*(CIO(DQS)+CIO(DQS))
12. Maximum external load capacitance on ZQ pin: 5pF
Input/output capacitance
(DQ, DM, DQS, DQS, TDQS, TDQS)
Input capacitance
(CK and CK)
Input capacitance delta
(CK and CK)
Input capacitance
(All other input-only pins)
Input capacitance delta
(DQS and DQS)
Input capacitance delta
(All control input-only pins)
Input capacitance delta
(all ADD and CMD input-onlypins)
Input/output capacitance delta
(DQ, DM, DQS, DQS, TDQS, TDQS)
Input/output capacitance of ZQ pin
ANALYZER( VNA)") with V
V
The capacitance is measured according to JEP147("PROCEDURE FOR MEASURING INPUT CAPACITANCE USING A VECTOR NETWORK
DD
=V
DDQ
=1.5V, V
Parameter
BIAS
=V
DD
DD
/2 and on-die termination off.
, V
DDQ
, V
CDI_ADD_CMD
SS
CDI_CTRL
Symbol
CDDQS
, V
CDCK
CDIO
CCK
CZQ
CIO
CI
SSQ
applied and all other pins floating (except the pin under test, CKE, RESET and ODT as necessary).
0.75
Min
-0.5
-0.5
-0.5
1.5
0.8
0
0
DDR3-800
-
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Max
0.15
0.2
3.0
1.6
1.5
0.3
0.5
0.3
3
0.75
Min
-0.5
-0.5
-0.5
1.5
0.8
DDR3-1066
0
0
-
Max
0.15
2.7
1.6
1.5
0.2
0.3
0.5
0.3
3
0.75
Min
-0.4
-0.4
-0.5
1.5
0.8
DDR3-1333
0
0
-
Max
0.15
0.15
2.5
1.4
1.3
0.2
0.4
0.3
3
2Gb DDR3 SDRAM
Rev. 1.0 December 2008
0.75
Min
-0.4
-0.4
-0.5
1.5
0.8
DDR3-1600
0
0
-
Max
0.15
0.15
2.3
1.4
1.3
0.2
0.4
0.3
3
Units
pF
pF
pF
pF
pF
pF
pF
pF
pF
2,3,9,10
2, 3, 12
2,3,7,8
Notes
2,3,11
1,2,3
2,3,4
2,3,6
2,3,5
2,3