am45dl3208g Advanced Micro Devices, am45dl3208g Datasheet - Page 58

• Manufacturer Part Number: am45dl3208g
• Description: Stacked Multi-chip Package Mcp Flash Memory And Sram
• Manufacturer: Advanced Micro Devices

Pseudo SRAM AC CHARACTERISTICS
Read Cycle
Notes:
1. WE# = V
2. t
3. At any given temperature and voltage condition, t
4. Do not access device with cycle timing shorter than t
56
voltage levels.
interconnection.
HZ
and t
Address
CE#1s
CE2s
OE#
Data Out
OHZ
IH
, if CIOs is low, ignore UB#s/LB#s timing.
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
High-Z
Figure 30. Pseudo SRAM Read Cycle
P R E L I M I N A R Y
t
HZ
LZ
t
BLZ
t
OLZ
(Max.) is less than t
RC
Am45DL3208G
t
AA
t
t
for continuous periods < 10 µs.
CO2
CO1
t
OE
t
RC
LZ
(Min.) both for a given device and from device to device
Data Valid
t
OH
t
OHZ
t
HZ
March 12, 2004