mc9s08dz32amlfr Freescale Semiconductor, Inc, mc9s08dz32amlfr Datasheet - Page 446
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mc9s08dz32amlfr
Manufacturer Part Number
mc9s08dz32amlfr
Description
Hcs08 Microcontrollers
Manufacturer
Freescale Semiconductor, Inc
Datasheet
1.MC9S08DZ32AMLFR.pdf
(458 pages)
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Appendix A Electrical Characteristics
A.14 EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the
MCU resides. Board design and layout, circuit topology choices, location and characteristics of external
components as well as MCU software operation all play a significant role in EMC performance. The
system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263,
AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
A.14.1
Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell
method in accordance with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed
with the microcontroller installed on a custom EMC evaluation board while running specialized EMC test
software. The radiated emissions from the microcontroller are measured in a TEM cell in two package
orientations (North and East). For more detailed information concerning the evaluation results, conditions
and setup, please refer to the EMC Evaluation Report for this device.
The maximum radiated RF emissions of the tested configuration in all orientations are less than or equal
to the reported emissions levels.
446
1
Radiated emissions,
electric field
Data based on qualification test results.
Parameter
Radiated Emissions
V
Symbol
RE_TEM
MC9S08DZ128 Series Data Sheet, Rev. 1
Table A-18. Radiated Emissions
Conditions
T
100 LQFP
V
A
DD
= +25
= 5V
o
C
500 – 1000 MHz
150 – 500 MHz
0.15 – 50 MHz
50 – 150 MHz
Frequency
SAE Level
IEC Level
16 MHz Crystal
20 MHz Bus
f
osc
/f
CPU
Freescale Semiconductor
Level
(Max)
14
21
-5
6
L
3
1
dBμV
Unit
—
—
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