mc9s08dz32amlfr Freescale Semiconductor, Inc, mc9s08dz32amlfr Datasheet - Page 445

• Manufacturer Part Number: mc9s08dz32amlfr
• Description: Hcs08 Microcontrollers
• Manufacturer: Freescale Semiconductor, Inc

A.13 FLASH and EEPROM
This section provides details about program/erase times and program-erase endurance for the FLASH and
EEPROM memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see
Freescale Semiconductor
1
2
3
4
Num
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
Typical endurance for FLASH and EEPROM is based on the intrinsic bitcell performance. For additional information on how
Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for
Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines typical data
retention, please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
10
11
1
2
3
4
5
6
7
8
9
—
—
—
—
—
—
—
—
C
C
C
C
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
FLASH Program/erase endurance
EEPROM Program/erase endurance
Data retention
All values shown in
characterization.
T
T = 25°C
T
T
T = 25°C
L
L
L
to T
to T
to T
H
H
H
= –40°C to + 125°C
= –40°C to + 0°C
= 0°C to + 125°C
4
2
Rating
(2)
Table A-17. FLASH and EEPROM Characteristics
1
MC9S08DZ128 Series Data Sheet, Rev. 1
Table A-17
(2)
3
3
(2)
are preliminary and subject to further
NOTE
V
Symbol
prog/erase
n
V
n
f
t
t
t
t
t
t
FCLK
D_ret
Burst
Page
Mass
EEPE
Fcyc
FLPE
prog
Read
10,000
10,000
50,000
Min
150
2.7
2.7
15
5
Chapter 4,
100,000
300,000
Typical
20,000
4000
100
Appendix A Electrical Characteristics
9
4
“Memory.”
Max
6.67
200
5.5
5.5
—
—
—
—
—
—
DD
cycles
cycles
years
supply.
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
445