mc33905s Freescale Semiconductor, Inc, mc33905s Datasheet - Page 23

• Manufacturer Part Number: mc33905s
• Description: System Basis Chip Gen2 With High Speed Can And Lin Interface
• Manufacturer: Freescale Semiconductor, Inc

Table 5. Dynamic Electrical Characteristics
values noted reflect the approximate parameter means at T
LIN 1 AND LIN 2 PHYSICAL LAYER: DRIVER CHARACTERISTICS FOR NORMAL SLEW RATE - 20.0 KBIT/SEC ACCORDING TO LIN
PHYSICAL LAYER SPECIFICATION
Bus load R
LIN PHYSICAL LAYER: DRIVER CHARACTERISTICS FOR SLOW SLEW RATE - 10.4 KBIT/SEC ACCORDING TO LIN PHYSICAL LAYER
SPECIFICATION
Bus load R
LIN PHYSICAL LAYER: DRIVER CHARACTERISTICS FOR FAST SLEW RATE
LIN PHYSICAL LAYER: CHARACTERISTICS AND WAKE-UP TIMINGS
V
Analog Integrated Circuit Device Data
Freescale Semiconductor
Duty Cycle 1:
Duty Cycle 2:
Duty Cycle 3:
Duty Cycle 4:
LIN Fast Slew Rate (Programming Mode)
Propagation Delay and Symmetry (See
page 26)
Bus Wake-Up Deglitcher (Low Power V
Modes)
(See
page
Bus Wake-up Event Reported
TXD Permanent Dominant State Delay (guaranteed by design)
SUP
Characteristics noted under conditions 5.5 V ≤ V
TH
TH
D1 = t
TH
TH
D2 = t
TH
TH
D3 = t
TH
TH
D4 = t
Propagation Delay of Receiver, t
Symmetry of Receiver Propagation Delay, t
From Low Power V
From Low Power V
from 7.0 to 18 V, bus load R
Figure
26
REC(max)
DOM(max)
REC(MIN)
DOM(MIN)
REC(MAX)
DOM(MAX)
REC(MIN)
DOM(MIN)
for Low Power Mode)
BUS_REC(MIN)
BUS_REC(MAX)
BUS_REC(MIN)
BUS_REC(MAX)
BUS
BUS
15, page
and C
and C
= 0.422 * V
= 0.389 * V
= 0.744 * V
= 0.581 * V
= 0.284 * V
= 0.251 * V
= 0.778 * V
= 0.616 * V
BUS
BUS
25
/(2 x t
/(2 x t
DD
DD
/(2 x t
/(2 x t
1.0 nF / 1.0 kΩ, 6.8 nF / 660 Ω, 10 nF / 500 Ω. See
1.0 nF / 1.0 kΩ, 6.8 nF / 660 Ω, 10 nF / 500 Ω. Measurement thresholds. See
for Low Power V
OFF Mode
ON Mode
SUP
SUP
SUP
SUP
SUP
SUP
SUP
SUP
BIT
BIT
BIT
BIT
), t
), t
Characteristic
), t
), t
BUS
BIT
BIT
BIT
BIT
REC_PD
= 50 µs, 7.0 V
= 96 µs, 7.0 V
= 50 µs, 7.6 V
= 96 µs, 7.6 V
and C
DD
Figure
DD
OFF and Low Power V
=MAX (t
BUS
OFF Mode and
REC_PDF
13, page
1.0 nF / 1.0 kΩ, 6.8 nF / 660 Ω, 10 nF / 500 Ω. See
REC_PDR
≤
≤
≤
≤
V
V
V
V
SUP
SUP
- t
SUP
SUP
SUP
25
REC_PDR
≤
≤
and
≤
≤
, t
≤ 27 V, - 40°C ≤ T
Figure
18 V
18 V
REC_PDF
18 V
18 V
Figure
A
DD
= 25°C under nominal conditions, unless otherwise noted.
16,
ON
)
14,
Figure
t
t
WAKE_LPVDD
WAKE_LPVDD
A
t
t
t
t
REC_SYM
Symbol
SR
≤ 125°C, GND = 0 V, unless otherwise noted. Typical
PROPWL
TXDDOM
REC_PD
13, page 25.
OFF
D1
D2
D3
D4
ON
FAST
DYNAMIC ELECTRICAL CHARACTERISTICS
0.396
0.417
0.65
- 2.0
Min
1.0
42
-
-
-
-
-
Figure
Figure
ELECTRICAL CHARACTERISTICS
13, page 25.
Typ
4.2
1.0
14, page 26.
20
70
-
-
-
-
-
-
-
0.581
0.590
1500
Max
1.35
6.0
2.0
95
12
-
-
-
V / μs
Unit
33904/5
μs
μs
μs
s
23