mc68hc908bd48 Freescale Semiconductor, Inc, mc68hc908bd48 Datasheet - Page 59

• Manufacturer Part Number: mc68hc908bd48
• Description: M68hc08 Microcontrollers Microcontroller
• Manufacturer: Freescale Semiconductor, Inc

4.7 FLASH Program Operation
MC68HC908BD48
Freescale Semiconductor
NOTE:
NOTE:
—
Rev. 2.1
Programming of the FLASH memory is done on a row basis. A row
consists of 64 consecutive bytes starting from addresses $XX00,
$XX40, $XX80, and $XXC0. Use this step-by-step procedure to program
a row of FLASH memory
In order to avoid program disturbs, the row must be erased before any
byte on that row is programmed.
This program sequence is repeated throughout the memory until all data
is programmed.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps. Do not exceed t
Memory Characteristics.
10. Wait for time, t
11. Clear the HVEN bit.
12. After time, t
1. Set the PGM bit. This configures the memory for program
2. Write any data to any FLASH address within the row address
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time, t
6. Write data to the FLASH address to be programmed.
7. Wait for time, t
8. Repeat step 6 and 7 until all the bytes within the row are
9. Clear the PGM bit.
operation and enables the latching of address and data for
programming.
range desired.
programmed.
mode again.
FLASH Memory
rcv
PROG
nvh
(min 1µs), the memory can be accessed in read
nvs
pgs
(min. 5µs).
(Figure 4-2
(min. 5µs).
(min. 10µs).
(min. 20µs).
is a flowchart representation):
PROG
maximum.
FLASH Memory
See 21.15
Data Sheet
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