st7pmc2s6 STMicroelectronics, st7pmc2s6 Datasheet - Page 325

• Manufacturer Part Number: st7pmc2s6
• Description: 8-bit Mcu For Automotive With Nested Interrupts, Flash, 10-bit Adc, Brushless Motor Control, 5 Timers, Spi, Linsci?
• Manufacturer: STMicroelectronics

ST7MC1K2-Auto, ST7MC1K6-Auto, ST7MC2S4-Auto, ST7MC2S6-Auto
12.6.2
12.7
12.7.1
Flash memory
Table 204.
1. Data based on characterization results, not tested in production.
2. V
3. Data based on simulation results, not tested in production
4. In Write/Erase mode the I
EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electro magnetic susceptibility)
Based on a simple running application on the product (toggling two LEDs through I/O ports),
the product is stressed by two electro magnetic events until a failure occurs (indicated by the
LEDs).
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Symbol
T
T
N
ERASE
f
t
t
V
PROG
reasons.
and slow modes (Flash devices) on page
CPU
I
VPP
RET
PP
RW
PP
PP
ESD: Electro-static discharge (positive and negative) is applied on all pins of the device
until a functional disturbance occurs. This test conforms with the IEC 1000-4-2
standard.
FTB: A Burst of fast transient voltage (positive and negative) is applied to V
through a 100pF capacitor, until a functional disturbance occurs. This test conforms
with the IEC 1000-4-4 standard.
must be applied only during the programming or erasing operation and not permanently for reliability
Operating frequency
Programming voltage
V
Internal V
Data retention
Write erase cycles
Programming or erasing
temperature range
PP
Dual voltage HDFlash memory
current
PP
Parameter
(3)(4)
stabilization time
DD
supply current consumption is the same as in Run mode
(2)
317)
Read mode
Write/Erase mode
4.5V < V
Read (V
Write/Erase
T
T
T
T
A
A
A
A
=
=
=
=
Conditions
85°C
105°C
125°C
25°C
PP
DD
=
< 5.5V
12V)
Min
11.4
100
-40
40
25
10
0
1
(1)
Electrical characteristics
Typ
10
25
(Section 12.4.1: Run
Max
12.6
200
30
85
8
8
DD
(1)
and V
325/371
cycles
years
MHz
Unit
mA
µA
µs
°C
V
SS