IDT72T20118L6-7BB IDT, Integrated Device Technology Inc, IDT72T20118L6-7BB Datasheet - Page 9

• Manufacturer Part Number: IDT72T20118L6-7BB
• Description: IC FIFO 65536X20 6-7NS 208BGA
• Manufacturer: IDT, Integrated Device Technology Inc
• Series: 72Tr

Specifications of IDT72T20118L6-7BB

• Function: Synchronous
• Memory Size: 1.3M (65K x 20)
• Access Time: 3.8ns
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 208-BGA
• Configuration: Dual
• Density: 2.5Mb
• Access Time (max): 3.8ns
• Word Size: 10/20Bit
• Organization: 128Kx20/256Kx10
• Sync/async: Synchronous
• Expandable: Yes
• Bus Direction: Uni-Directional
• Package Type: BGA
• Clock Freq (max): 150MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Supply Voltage (min): 2.375V
• Operating Supply Voltage (max): 2.625V
• Supply Current: 60mA
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 208
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Data Rate: -
• Lead Free Status / Rohs Status: Not Compliant
• Other names: 72T20118L6-7BB

RECOMMENDED DC OPERATING CONDITIONS
NOTE:
1. V
ABSOLUTE MAXIMUM RATINGS
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
2. Compliant with JEDEC JESD8-5. V
NOTES:
1. Both WCLK and RCLK toggling at 20MHz. Data inputs toggling at 10MHz. WCS = HIGH, REN or RCS = HIGH.
2. Typical I
3. Typical I
4. Total Power consumed: PT = [(V
5. Outputs are not 3.3V tolerant.
(HSTL only)
DC ELECTRICAL CHARACTERISTICS
(Commercial: V
IDT72T2098/108/118/128 2.5V HIGH-SPEED TeraSync™ DDR/SDR FIFO 20-BIT/10-BIT CONFIGURATIONS
32K x 20/64K x 10, 64K x 20/128K x 10, 128K x 20/256K x 10, 256K x 20/512K x 10
Symbol
GND
V
V
V
V
T
I
V
Symbol
I
I
V
V
I
I
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
V
OUT
DDQ
T
T
LI
LO
CC1
CC2
REF
CC
REF
Symbol
TERM
STG
IH
OH
OL
IL
A
A
(1,2)
(1)
(5)
is only required for HSTL or eHSTL inputs. V
CC1
DDQ
Supply Voltage
Output Rail Voltage for I/Os
Supply Voltage
Input High Voltage
Input Low Voltage
Voltage Reference Input
Operating Temperature Commercial
Operating Temperature Industrial
calculation
calculation: With Data Outputs in High-Impedance: I
CC
Input Leakage Current
Output Leakage Current
Output Logic “1” Voltage,
Output Logic “0” Voltage,
Active V
Standby V
Terminal Voltage
with respect to GND
Storage Temperature
DC Output Current
= 2.5V ± 0.125V, T
:
CC
Rating
for LVTTL I/O I
for HSTL or eHSTL I/O I
With Data Outputs in Low-Impedance: I
fs = WCLK frequency = RCLK frequency (in MHz), V
t
CC
A
Current (V
= 25°C, C
Current (V
CC
Parameter
CC
x I
CC
CC
terminal only.
L
⎯ LVTTL
⎯ eHSTL
⎯ HSTL
⎯ LVTTL
⎯ eHSTL
⎯ HSTL
⎯ eHSTL
⎯ HSTL
CC
) + (V
A
= capacitive load (pf)
CC1
= 2.5V)
= 0°C to +70°C;Industrial: V
= 2.5V) I/O = LVTTL
I
I
I
I
I
I
OH
OH
OH
OL
OL
OL
Parameter
(mA) = 0.6mA x fs, fs = WCLK frequency = RCLK frequency (in MHz)
DDQ
= 8 mA @V
= 8 mA @V
= 8 mA @V
= –8 mA @V
= –8 mA @V
= –8 mA @V
REF
Commercial
CC1
–0.5 to +3.6
–55 to +125
–50 to +50
x I
DDQ
I/O = LVTTL
I/O = HSTL
I/O = eHSTL
I/O = HSTL
I/O = eHSTL
should be tied LOW for LVTTL operation.
(mA) = 38mA + (0.7mA x fs), fs = WCLK frequency = RCLK frequency (in MHz)
)].
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
(2)
DDQ
DDQ
= 2.5V ± 0.125V (LVTTL)
= 1.8V ± 0.1V (eHSTL)
= 1.5V ± 0.1V (HSTL)
= 2.5V ± 0.125V (LVTTL)
= 1.8V ± 0.1V (eHSTL)
= 1.5V ± 0.1V (HSTL)
V
V
(mA) = 0.15mA x fs
(mA) = (C
REF
REF
2.375
2.375
0.68
-0.3
1.7
0.8
-40
Unit
Min.
—
—
°
mA
0
0
V
C
+0.2
+0.2
CC
DDQ
= 2.5V ± 0.125V, T
L
x V
9
= 2.5V for LVTTL; 1.5V for HSTL; 1.8V for eHSTL, N = Number of outputs switching.
DDQ
CAPACITANCE
NOTES:
1. With output deselected, (OE ≥ V
2. Characterized values, not currently tested.
3. C
Symbol
C
C
IN
OUT
x fs x 2N)/2000
Typ.
IN
0.75
(2,3)
2.5
2.5
0.9
—
—
—
—
—
—
—
—
0
for Vref is 20pF.
(1,2)
A
= -40°C to +85°C)
V
V
Parameter
Capacitance
Capacitance
V
V
V
REF
REF
2.625
2.625
Max.
3.45
DDQ
DDQ
DDQ
0.7
1.0
0.9
—
—
70
85
Min.
Output
0
–10
–10
—
Input
—
—
—
—
—
—
—
—
-0.2
-0.2
-0.4
-0.4
-0.4
(1)
(T
IH
A
Unit
).
= +25°C, f = 1.0MHz)
°
°
V
V
V
V
V
V
V
V
V
V
V
C
C
0.4V
0.4V
0.4V
Max.
Conditions
10
10
—
—
—
20
60
60
10
50
50
V
V
OUT
COMMERCIAL AND INDUSTRIAL
IN
= 0V
= 0V
TEMPERATURE RANGES
FEBRUARY 13, 2009
Unit
µA
mA
mA
mA
mA
mA
mA
µA
V
V
V
V
V
V
Max.
10
10
(3)
Unit
pF
pF