HM-6504 Intersil Corporation, HM-6504 Datasheet

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HM-6504

Manufacturer Part Number
HM-6504
Description
4096 x 1 CMOS RAM
Manufacturer
Intersil Corporation
Datasheet
March 1997
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
Features
• This Circuit is Processed in Accordance to MIL-STD-
• Low Power Standby . . . . . . . . . . . . . . . . . . . 125 W Max
• Low Power Operation . . . . . . . . . . . . . 35mW/MHz Max
• Data Retention . . . . . . . . . . . . . . . . . . . . . . . at 2.0V Min
• TTL Compatible Input/Output
• Three-State Output
• Standard JEDEC Pinout
• Fast Access Time. . . . . . . . . . . . . . . . . . 120/200ns Max
• 18 Pin Package for High Density
• On-Chip Address Register
• Gated Inputs - No Pull Up or Pull Down Resistors
Ordering Information
Pinout
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
Required
CERDIP
PACKAGE
|
Copyright
TEMPERATURE RANGE
-55
©
o
C to +125
Intersil Corporation 1999
GND
o
A0
A1
A2
A3
A4
A5
C
W
Q
HM-6504/883 (CERDIP)
PIN
W
Q
A
E
D
1
2
3
4
5
6
7
8
9
HM1-6504B/883
TOP VIEW
Address Input
Chip Enable
Write Enable
Data Input
Data Output
6-134
DESCRIPTION
200ns
HM-6504/883
Description
The HM-6504/883 is a 4096 x 1 static CMOS RAM
fabricated using self-aligned silicon gate technology. The
device utilizes synchronous circuitry to achieve high perfor-
mance and low power operation.
On-chip latches are provided for addresses, data input and
data output allowing efficient interfacing with microprocessor
systems. The data output can be forced to a high impedance
state for use in expanded memory arrays.
Gated inputs allow lower operating current and also elimi-
nate the need for pull up or pull down resistors. The
HM-6504/883 is a fully static RAM and may be maintained in
any state for an indefinite period of time.
Data retention supply voltage and supply current are guaran-
teed over temperature.
18
17
16
15
14
13
12
11
10
VCC
A6
A7
A8
A9
A10
A11
D
E
HM1-6504/883
300ns
4096 x 1 CMOS RAM
F18.3
PKG. NO
File Number
2993.1

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HM-6504 Summary of contents

Page 1

... Gated inputs allow lower operating current and also elimi- nate the need for pull up or pull down resistors. The HM-6504/883 is a fully static RAM and may be maintained in any state for an indefinite period of time. Data retention supply voltage and supply current are guaran- teed over temperature ...

Page 2

... NOTES: 1. All lines active high-positive logic. 2. Three-state Buffers: A high output active. 3. Control and Data Latches: L low and Q latches on rising edge Address Latches: Latch on falling edge Gated Decoders: Gate on rising edge of G. HM-6504/883 A 6 GATED ROW MATRIX 64 DECODER ...

Page 3

... CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Operating Conditions Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Operating Temperature Range . . . . . . . . . . . . . . . . -55 TABLE 1. HM-6504/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS Device Guaranteed and 100% Tested PARAMETER SYMBOL Output Low Voltage ...

Page 4

... TABLE 2. HM-6504/883 AC ELECTRICAL PERFORMANCE SPECIFICATIONS Device Guaranteed and 100% Tested (NOTES 1, 2) PARAMETER SYMBOL CONDITIONS (1) Chip Enable TELQV VCC = 4.5 and Access Time 5.5V Address Access (2) TAVQV VCC = 4.5 and Time 5.5V, Note 3 Chip Enable (5) TELEH VCC = 4.5 and Pulse Negative 5.5V Width Chip Enable (6) TEHEL VCC = 4.5 and Pulse Positive 5 ...

Page 5

... TABLE 3. HM-6504/883 ELECTRICAL PERFORMANCE SPECIFICATIONS PARAMETER SYMBOL Input Capacitance CI Output CO Capacitance Chip Enable Output (3) TELQX Disable Time Chip Enable Output (4) TEHQZ Disable Time Write Enable Read (12) TWHEL Mode Setup Time High Level Output VOHL Voltage NOTE: 1. The parameters listed in Table 3 are controlled via design, or process parameters are characterized upon initial design and after major process and/or design changes ...

Page 6

... The address information is latched in the on-chip registers on the falling edge 0). Minimum address set up and hold time requirements must be met. After the required hold time, the addresses may change state without affecting device operation. During time ( the output becomes HM-6504/883 (8) TELEL (18) TELEH (5) ...

Page 7

... The logic value the time E falls determines the state of the output buffer for that cycle. Since W is low when E falls, the output buffer is latched into the high impedance state and will remain in that HM-6504/883 (8) (18) TELEL (5) TELEH ...

Page 8

... The late write cycle is a cross between the early write cycle and the read-modify-write cycle. Recall that in the early write, the output is guaranteed to remain high impedance, and in the read-modify-write, the output is guaranteed valid at access time. The late write is HM-6504/883 (8) TELAX (18) TELEL (5) TELEH ...

Page 9

... NOTES: All resistors 47k 5 100kHz 10 F12 = F11 VCC = 5.5V 0.5V. VIH = 4.5V 10%. VIL = -0.2V to +0.4V 0.01 F Min. HM-6504/883 + IOH 1.5V - EQUIVALENT CIRCUIT HM-6504/883 CERDIP VCC VCC F10 F11 F12 A4 A9 ...

Page 10

... No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com HM-6504/883 WORST CASE CURRENT DENSITY 1. A/cm LEAD TEMPERATURE (10s soldering): o 300 C HM-6504/883 A1 A0 VCC A6 W GND E D 6-143 A7 A8 ...

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