HM-65642F Intersil Corporation, HM-65642F Datasheet
HM-65642F
Related parts for HM-65642F
HM-65642F Summary of contents
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... Intersil 80C86 and 80C88 micropro- cessors is simplified by the convenient output enable (G) input. The HM-65642/883 is a full CMOS RAM which utilizes an array of six transistor (6T) memory cells for the most stable and lowest possible standby supply current over the full mili- tary temperature range ...
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... Operating Conditions Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Operating Temperature Range -55 Input Low Voltage -0.3V to +0.8V TABLE 1. HM-65642/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS Device Guaranteed and 100% Tested PARAMETER SYMBOL High Level Output VOH 1 VCC = 4 ...
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... TABLE 1. HM-65642/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS (Continued) Device Guaranteed and 100% Tested PARAMETER SYMBOL Data Retention ICCDR HM-65642B/883 Supply Current VCC = 2.0V VCC -0. GND +0.3V HM-65642/883 VCC = 2.0V VCC -0. GND +0.3V HM-65642C/883 VCC = 2.0V VCC -0. GND +0.3V Functional Test FT VCC = 4.5V (Note 3) NOTES: 1. All voltages referenced to device GND. ...
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... TABLE 2. HM-65642/883 AC ELECTRICAL PERFORMANCE SPECIFICATIONS (Continued) (NOTES 1, 2) PARAMETERS SYMBOL CONDITIONS Data Hold Time TWHDX VCC = 4.5V and 5.5V TE1HDX VCC = 4.5V and 5.5V TE2LDX VCC = 4.5V and 5.5V NOTES: 1. All voltages referenced to device GND measurements assume transition time ≤ 5ns; input levels = 0.0V to 3.0V; timing reference levels = 1.5V; output load = 1TTL equivalent load and CL ≥ ...
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... HM-65642/883 TABLE 4. APPLICABLE SUBGROUPS CONFORMANCE GROUPS GROUPS METHOD Interim Test 1 100%/5004 Interim Test 100%/5004 PDA 100%/5004 Final Test 1 100%/5004 Group A Samples/5005 Groups C and D Samples/5005 SUBGROUPS - 8A, 8B, 10 8A, 8B 224 ...
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... ADDRESS 1 A TAVQV Q FIGURE 2. READ CYCLE HIGH LOW HM-65642/883 1. The RAM must be kept disabled during data retention. This is ac- complished by holding the E2 pin between -0.3V and GND. 2. During power-up and power-down transitions, E2 must be held between -0.3V and 10% of VCC. 3. The RAM can begin operating one TAVAX after VCC reaches the minimum operating voltage of 4 ...
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... Read Cycles A TAVQV E1 TE1LQV TE1LQX E2 TE2HQV TE2HQX G TGLQV TGLQX Q HM-65642/883 TAVAX FIGURE 3. READ CYCLE II: W HIGH 226 TE1HQZ TE2LQZ TGHQZ ...
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... Write Cycles A TAVWL TAVE1L FIGURE 5. WRITE CYCLE II: EARLY WRITE - CONTROLLED BY E1 HM-65642/883 TAVAX TWLWH TDVWH TWLQZ FIGURE 4. WRITE CYCLE I: LATE WRITE TAVAX TE1LE1H TDVE1H 227 TWHAX TWHQX TWHDX TE1HAX TE1HDX ...
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... However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com HM-65642/883 TAVAX TE2HE2L ...
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... DQ7 DQ0 DQ6 DQ5 17 F2 DQ4 16 F2 DQ3 15 F2 NOTES 100kHz ±10 0.01µF Min. VCC = 5.5V ±0.5V. VIH = 4.5V ±10%. VIL = -0.2V to +0.4V. 229 IOL HM-65642/883 CLCC TOP VIEW A11 A10 10 24 ...
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... No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com GLASSIVATION: Type: SiO Thickness: 8k WORST CASE CURRENT DENSITY HM-65642/883 VCC DQ2 GND DQ3 DQ4 230 2 Å ...