MT58L1MY18P Micron Semiconductor Products, Inc., MT58L1MY18P Datasheet - Page 10

• Manufacturer Part Number: MT58L1MY18P
• Description: 18Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O; 2.5V Vdd, 2.5V I/O, Pipelined, Scd,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 3:
Table 4:
Table 5:
NOTE:
Table 6:
NOTE:
18Mb: 1 Meg x 18, 512K x 32/36, Pipelined, SCD SyncBurst SRAM
MT58L1MY18P1_16_D.fm – Rev. D, Pub 2/03
FUNCTION
FUNCTION
READ
READ
WRITE Byte “a”
WRITE Byte “b”
WRITE All Bytes
WRITE All Bytes
READ
READ
WRITE Byte “a”
WRITE All Bytes
WRITE All Bytes
Using BWE# and BWa# through BWd#, any one or more bytes may be written.
Using BWE# and BWa# through BWd#, any one or more bytes may be written.
FIRST ADDRESS
FIRST ADDRESS
(EXTERNAL)
(EXTERNAL)
X...X00
X...X01
X...X10
X...X11
X...X00
X...X01
X...X10
X...X11
Interleaved Burst Address Table (Mode = NC or HIGH)
Linear Burst Address Table (Mode = LOW)
Partial Truth Table For WRITE Commands (x18)
Partial Truth Table For WRITE Commands (x32/x36)
GW#
H
H
H
H
L
SECOND ADDRESS
SECOND ADDRESS
(INTERNAL)
(INTERNAL)
X...X01
X...X00
X...X11
X...X10
X...X01
X...X10
X...X11
X...X00
BWE#
H
X
L
L
L
10
GW#
PIPELINED, SCD SYNCBURST SRAM
H
H
H
H
H
L
BWa#
18Mb: 1 MEG x 18, 512K x 32/36
H
X
X
L
L
THIRD ADDRESS
THIRD ADDRESS
Micron Technology, Inc., reserves the right to change products or specifications without notice.
(INTERNAL)
(INTERNAL)
X...X10
X...X11
X...X00
X...X01
X...X10
X...X11
X...X00
X...X01
BWE#
H
X
L
L
L
L
BWb#
H
H
X
X
L
BWa#
H
H
BWc#
X
X
L
L
FOURTH ADDRESS
FOURTH ADDRESS
X
H
H
X
L
(INTERNAL)
(INTERNAL)
X...X11
X...X10
X...X01
X...X00
X...X11
X...X00
X...X01
X...X10
©2003 Micron Technology, Inc.
BWb#
BWd#
X
H
H
X
L
L
X
H
H
X
L