MT57W1MH18B Micron Semiconductor Products, Inc., MT57W1MH18B Datasheet - Page 6

• Manufacturer Part Number: MT57W1MH18B
• Description: 18Mb Ddrii SRAM, 1.8V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 2:
NOTE
18Mb: 1.8V V
MT57W1MH18B_H.fm – Rev. H, Pub. 3/03
1. Expansion
2. NW1# controls writes to DQ4:DQ7
3. Expansion address: 7A for 144Mb
4. Expansion address: 10A for 36Mb
5. Expansion address: 5B for 288Mb
6. NW0# controls writes to DQ0:DQ3
M
A
D
G
H
K
N
B
C
E
P
R
F
J
L
:
Note that the x8 does not permit random start address on the least-significant address bit; SA0 = 0 at the start of each
access.
DD
, HSTL, DDRIIb2 SRAM
DLL#
TDO
CQ#
A
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
1
ddress: 2A for 72Mb
2 Meg x 8 Ball Layout (Top View)
165-Ball FBGA
V
SS
DQ6
V
TCK
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
2
REF
/
SA
1
V
DQ4
DQ5
DQ7
NC
NC
NC
NC
NC
NC
NC
NC
NC
SA
DD
SA
3
Q
V
V
V
V
V
V
V
R/W#
V
V
V
V
SA
DD
DD
DD
DD
DD
DD
DD
SA
SA
4
SS
SS
SS
SS
Q
Q
Q
Q
Q
Q
Q
NW1#
NC/SA
V
V
V
V
V
V
V
V
V
SA
SA
SA
SA
5
DD
DD
DD
DD
DD
SS
SS
SS
SS
2
5
6
2 MEG
V
V
V
V
V
V
V
V
V
K#
SA
SA
C#
6
K
C
SS
SS
SS
SS
SS
SS
SS
SS
SS
1.8V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NC/SA
NW0#
V
V
V
V
V
V
V
V
V
SA
SA
SA
SA
7
DD
DD
DD
DD
DD
SS
SS
SS
SS
X
3
6
8, 1 MEG
DD
, HSTL, DDRIIb2 SRAM
V
V
V
V
V
V
V
LD#
V
V
V
V
SA
DD
DD
DD
DD
DD
DD
DD
SA
SA
8
SS
SS
SS
SS
Q
Q
Q
Q
Q
Q
Q
V
X
NC
NC
NC
NC
NC
NC
DD
NC
NC
NC
NC
NC
NC
SA
SA
9
Q
18, 512K
V
SS /
DQ1
TMS
Vref
10
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
©2003 Micron Technology, Inc.
SA
4
X
DQ3
DQ2
DQ0
TDI
CQ
NC
NC
NC
NC
ZQ
NC
NC
NC
NC
NC
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