MT57W1MH18B Micron Semiconductor Products, Inc., MT57W1MH18B Datasheet - Page 22

• Manufacturer Part Number: MT57W1MH18B
• Description: 18Mb Ddrii SRAM, 1.8V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE
Table 15: TAP AC Characteristics
Notes 1, 2; 0°C £ T
NOTE
18Mb: 1.8V V
MT57W1MH18B_H.fm – Rev. H, Pub. 3/03
1.
2. Test conditions are specified using the load in Figure 10.
DESCRIPTION
Clock
Clock cycle time
Clock frequency
Clock HIGH time
Clock LOW time
Output Times
TCK LOW to TDO unknown
TCK LOW to TDO valid
TDI valid to TCK HIGH
TCK HIGH to TDI invalid
Setup Times
TMS setup
Capture setup
Hold Times
TMS hold
Capture hold
Timing for SRAM inputs and outputs is congruent with TDI and TDO, respectively, as shown in Figure 9.
t
CS and
:
:
DD
, HSTL, DDRIIb2 SRAM
t
CH refer to the setup and hold time requirements of latching data from the boundary scan register.
A
£ +70°C; V
Test Mode Select
Test Data-Out
DD
Test Data-In
Test Clock
= 1.8V ±0.1V
(TMS)
(TDO)
(TCK)
(TDI)
1
Figure 9: TAP Timing
t MVTH
t DVTH
2
t THTL
t THMX
t THDX
22
t
TLTH
2 MEG
3
1.8V V
t THTH
SYMBOL
t
t
t
t
t
t
t
t
t
MVTH
THMX
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DVTH
THDX
THTH
TLOX
TLOV
THTL
TLTH
DON’T CARE
t
t
f
CH
TF
CS
4
X
8, 1 MEG
DD
t TLOX
t TLOV
, HSTL, DDRIIb2 SRAM
5
MIN
100
40
40
10
10
10
10
10
10
UNDEFINED
0
6
X
18, 512K
MAX
10
20
©2003 Micron Technology, Inc.
UNITS
X
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
36