MT57W1MH18B Micron Semiconductor Products, Inc., MT57W1MH18B Datasheet - Page 13

• Manufacturer Part Number: MT57W1MH18B
• Description: 18Mb Ddrii SRAM, 1.8V Vdd, Hstl, 2-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 11: I
Notes appear following parameter tables on page 16; 0°C £ T
Table 12: Capacitance
Note 13; notes appear following parameter tables on page 16
Table 13: Thermal Resistance
Note 13; notes appear following parameter tables on page 16
18Mb: 1.8V V
MT57W1MH18B_H.fm – Rev. H, Pub. 3/03
DESCRIPTION
DESCRIPTION
DESCRIPTION
Operating Supply
Current: DDR
Standby Supply
Current: NOP
Output Supply
Current: DDR
(Information only)
Address/Control Input Capacitance
Input, Output Capacitance (DQ)
Clock Capacitance
Junction to Ambient (Airflow of 1m/s)
Junction to Case (Top)
Junction to Balls (Bottom)
DD
, HSTL, DDRIIb2 SRAM
DD
Operating Conditions and Maximum Limits
(MIN); Outputs open; x:1
All inputs £ V
All addresses/data static
t
and data bits toggling
WRITEs; 50% address
KHKH =
Device in NOP state;
Cycle time ³
on each clock cycle
ratio for READs to
CONDITIONS
C
L
t
= 15pF
KHKH (MIN);
IL
t
or
KHKH
³
V
IH
;
SYMBOL TYP
x8, x18
x8, x18
1.125 inch, 4-layer printed
I
DD
x36
I
x36
x18
x36
I
SB1
x8
DD
Soldered on a 4.25 x
Q
T
A
CONDITIONS
= 25°C; f = 1 MHz
CONDITIONS
circuit board
TBD
TBD
TBD
13
A
£ +70°C; V
2 MEG
525
710
255
265
189
42
95
-3
1.8V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-3.3
475
640
235
240
170
DD
38
85
X
= 1.8V ±0.1V unless otherwise noted
8, 1 MEG
DD
400
545
200
210
142
SYMBOL
32
71
-4
SYMBOL
MAX
C
C
C
, HSTL, DDRIIb2 SRAM
CK
O
q
q
q
I
JA
JC
JB
330
445
170
180
142
25
57
-5
280
380
150
160
21
47
95
-6
TYP
19.4
1.0
9.6
TYP
X
4.5
5.5
6
18, 512K
-7.5
235
310
125
135
17
38
76
UNITS
°C/W
°C/W
°C/W
MAX
UNITS
5.5
6.5
©2003 Micron Technology, Inc.
mA
mA
mA
7
NOTES
X
NOTES
UNITS
10, 11
15
9, 10
14
36
12
pF
pF
pF