MT57W1MH18B Micron Semiconductor Products, Inc., MT57W1MH18B Datasheet - Page 14

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MT57W1MH18B

Manufacturer Part Number
MT57W1MH18B
Description
18Mb Ddrii SRAM, 1.8V Vdd, Hstl, 2-Word Burst,
Manufacturer
Micron Semiconductor Products, Inc.
Datasheet
Table 14: AC Electrical Characteristics and Recommended Operating Conditions
Notes 16-19; 22; notes appear following parameter tables on page 16; °C £ T
18Mb: 1.8V V
MT57W1MH18B_H.fm – Rev. H, Pub. 3/03
DESCRIPTION
Clock
Clock cycle
time
(K, K#, C, C#)
Clock phase
jitter (K, K#,
C, C#)
Clock HIGH
time
(K, K#, C, C#)
Clock LOW
time
(K, K#, C, C#)
Clock to
clock#
(K­
t
minimum
Clock# to
clock
(K#­®K­,
C#­®C­) at
t
minimum
Clock to data
clock
(K­
K#­
DLL lock time
(K, C)
K static to DLL
reset
Output Times
C, C# HIGH to
output valid
C, C# HIGH to
output hold
C, C# HIGH to
echo clock
valid
C, C# HIGH to
echo clock
hold
KHKH
KHKH
®
®
®
®
C#­) at
K#­,
C­,
C#­)
DD
, HSTL, DDRIIb2 SRAM
t
t
t
t
t
t
t
KC lock 1,024
t
t
CHCQV
CHCQX -0.45
KHK#H
K#HKH
t
t
t
KC var
KHKH
CHQV
CHQX
SYM
KHCH
KHKL
KLKH
reset
t
KC
-0.45
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
3.00
1.20
1.20
1.35
1.35
0.00
30
-3
3.47
0.20
1.30
0.45
0.45
1,024
-0.45
-0.45
3.30
1.32
1.32
1.49
1.49
0.00
30
-3.3
4.20
0.20
1.45
0.45
0.45
1,024
-0.45
-0.45
4.00
1.60
1.60
1.80
1.80
0.00
30
-4
14
5.25
0.20
1.80
0.45
0.45
2 MEG
1,024
-0.45
-0.45
1.8V V
5.00
2.00
2.00
2.20
2.20
0.00
30
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-5
6.30
0.20
2.30
0.45
0.45
X
A
£ +70°C; T
8, 1 MEG
DD
1,024
-0.50
-0.50
6.00
2.40
2.40
2.70
2.70
0.00
30
, HSTL, DDRIIb2 SRAM
-6
J
7.80
0.20
2.80
0.50
0.50
£ +95°C; V
X
1,024
-0.50
-0.50
7.50
3.00
3.00
3.38
3.38
0.00
30
18, 512K
-7.5
DD
8.40
0.20
3.55
0.50
0.50
= 1.8V ±0.1V
©2003 Micron Technology, Inc.
UNITS NOTES
cycles
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
X
36
20
21
22

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