FDPC8011S Fairchild Semiconductor, FDPC8011S Datasheet - Page 8

• Manufacturer Part Number: FDPC8011S
• Description: This device includes two specialized N-Channel MOSFETs in a dual package
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDPC8011S Rev.C2
Typical Characteristics (Q2 N-Channel)
10
0.01
100
200
100
8
6
4
2
0
0.1
10
10
0.001
Figure 20. Gate Charge Characteristics
1
0
1
0.01
I
D
= 27 A
SINGLE PULSE
T
R
T
Figure 22. Unclamped Inductive
THIS AREA IS
LIMITED BY r
J
A
θ
Figure 24. Forward Bias Safe
JA
= MAX RATED
= 25
10
= 135
0.01
o
V
C
Switching Capability
DS
t
o
0.1
, DRAIN to SOURCE VOLTAGE (V)
20
AV
T
C/W
DS
Q
Operating Area
J
, TIME IN AVALANCHE (ms)
g
= 125
(
, GATE CHARGE (nC)
on
0.1
)
V
DD
30
V
o
= 10 V
C
DD
T
= 15 V
J
1
1
= 25
40
o
V
C
T
DD
J
10
= 100
50
= 13 V
10
o
C
100
60
100 ms
100
1s
10s
DC
1 ms
10 ms
μ
70
1000
s
100
T
J
8
= 25
o
C unlenss otherwise noted
10000
3000
1000
120
100
100
1000
0.5
80
60
40
20
10
100
Figure 23. Maximum Continouns Drain
0
1
10
50
25
0.1
-4
Figure 25. Single Pulse Maximum
Current vs Ambient Temperature
Figure 21. Capacitance vs Drain
f = 1 MHz
V
Limited by Package
R
GS
θ
JC
10
= 0 V
= 3.5
-3
V
50
V
GS
Power Dissipation
DS
to Source Voltage
o
T
10
t, PULSE WIDTH (sec)
= 4.5 V
, DRAIN TO SOURCE VOLTAGE (V)
C/W
C
,
-2
CASE TEMPERATURE
75
10
1
-1
V
GS
10
100
= 10 V
0
SINGLE PULSE
R
10
θ
JA
(
o
1
C
= 135
)
125
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10
100
o
C
C
C/W
C
oss
rss
iss
1000
150
30