FDPC8011S Fairchild Semiconductor, FDPC8011S Datasheet - Page 3

• Manufacturer Part Number: FDPC8011S
• Description: This device includes two specialized N-Channel MOSFETs in a dual package
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDPC8011S Rev.C2
Electrical Characteristics
Drain-Source Diode Characteristics
Notes:
1.R
the user's board design.
2 Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Q1 :E
V
t
Q
rr
Q2: E
SD
rr
θJA
Symbol
is determined with the device mounted on a 1 in
AS
AS
of 21 mJ is based on starting T
of 97 mJ is based on starting T
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
J
J
c. 151 °C/W when mounted on a
= 25
= 25
minimum pad of 2 oz copper
o
o
a. 77 °C/W when mounted on
C; N-ch: L = 1.2 mH, I
C; N-ch: L = 0.6 mH, I
a 1 in
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
2
pad of 2 oz copper
= 25 °C unless otherwise noted
AS
AS
V
V
Q1
I
Q2
I
F
F
= 6 A, V
= 18 A, V
GS
GS
= 13 A, di/dt = 100 A/μs
= 27 A, di/dt = 300 A/μs
= 0 V, I
= 0 V, I
DD
DD
Test Conditions
= 23 V, V
3
= 23 V, V
S
S
= 13 A
= 27 A
GS
GS
= 10 V. 100% test at L= 0.1 mH, I
= 10 V. 100% test at L= 0.1 mH, I
(Note 2)
(Note 2)
θJC
Type
is guaranteed by design while R
Q1
Q2
Q1
Q2
Q1
Q2
b. 63 °C/W when mounted on
d. 135 °C/W when mounted on a
a 1 in
minimum pad of 2 oz copper
AS
AS
Min
= 14.5 A.
2
= 32.9 A.
pad of 2 oz copper
Typ
0.8
0.8
22
30
32
8
www.fairchildsemi.com
θCA
Max
1.2
1.2
is determined by
Units
nC
ns
V