FDPC8011S Fairchild Semiconductor, FDPC8011S Datasheet - Page 7

• Manufacturer Part Number: FDPC8011S
• Description: This device includes two specialized N-Channel MOSFETs in a dual package
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDPC8011S Rev.C2
Typical Characteristics (Q2 N-Channel)
120
100
120
100
80
60
40
20
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
0
0
0.0
Figure 14. On-Region Characteristics
Figure 16. Normalized On-Resistance
1.0
-75
Figure 18. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DS
I
V
-50
D
GS
vs Junction Temperature
= 5 V
= 27 A
V
0.2
= 10 V
DS
V
T
-25
GS
,
J
1.5
,
DRAIN TO SOURCE VOLTAGE (V)
V
, GATE TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE
GS
V
= 3 V
GS
0
V
0.4
T
GS
= 3.5 V
V
J
GS
= 125
= 4.5 V
25
μ
s
= 10 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
2.0
o
C
50
0.6
75
V
T
2.5
GS
J
(
o
= -55
100 125 150
0.8
C
= 2.5 V
T
)
J
= 25
o
C
μ
s
o
C
1.0
3.0
T
J
7
= 25
o
C unlenss otherwise noted
Figure 15. Normalized on-Resistance vs Drain
1E-3
0.01
200
100
0.1
10
1
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Figure 17. On-Resistance vs Gate to
0.0
Forward Voltage vs Source Current
0
2
Figure 19. Source to Drain Diode
V
GS
Current and Gate Voltage
= 0 V
V
T
V
SD
20
J
GS
0.2
= 125
, BODY DIODE FORWARD VOLTAGE (V)
V
= 2.5 V
GS
I
Source Voltage
D
4
,
,
GATE TO SOURCE VOLTAGE (V)
o
DRAIN CURRENT (A)
C
40
T
0.4
J
= -55
T
60
J
6
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
= 25
GS
C
V
0.6
= 3 V
GS
o
C
= 4.5 V V
80
8
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0.8
T
V
T
I
100
J
GS
D
J
GS
= 125
= 25
= 27 A
= 3.5 V
= 10 V
μ
μ
o
o
s
s
C
C
120
1.0
10