FDPC8011S Fairchild Semiconductor, FDPC8011S Datasheet - Page 5

• Manufacturer Part Number: FDPC8011S
• Description: This device includes two specialized N-Channel MOSFETs in a dual package
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDPC8011S Rev.C2
Typical Characteristics (Q1 N-Channel)
0.01
100
50
10
0.1
0.001
10
10
1
1
Figure 7.
0.01
8
6
4
2
0
0
SINGLE PULSE
T
R
T
THIS AREA IS
LIMITED BY r
I
D
Figure 9.
J
A
θ
Figure 11.
JA
= 13 A
= MAX RATED
= 25
= 151
0.01
o
V
C
Switching Capability
DS
4
t
Gate Charge Characteristics
o
AV
0.1
C/W
, DRAIN to SOURCE VOLTAGE (V)
V
DS
Operating Area
, TIME IN AVALANCHE (ms)
DD
Unclamped Inductive
T
(
Q
on
J
g
= 10 V
Forward Bias Safe
)
, GATE CHARGE (nC)
= 125
0.1
8
o
V
C
DD
T
1
= 13 V
J
= 25
V
12
DD
1
o
C
T
= 15 V
J
= 100
10
16
o
C
10
100 ms
10 ms
100
1 ms
10s
DC
1s
μ
s
50
100
20
T
J
5
= 25 °C unless otherwise noted
2000
1000
1000
100
100
60
50
40
30
20
10
0.5
10
10
0
Figure 10. Maximum Continuous Drain
10
25
1
0.1
Figure 12.
-4
Figure 8.
Current vs. Ambient Temperature
Limited by Package
f = 1 MHz
V
R
GS
θ
JC
10
= 0 V
= 5.0
-3
V
50
DS
Power Dissipation
to Source Voltage
T
, DRAIN TO SOURCE VOLTAGE (V)
o
Single Pulse Maximum
C/W
C
10
t, PULSE WIDTH (sec)
Capacitance vs Drain
,
CASE TEMPERATURE
-2
V
GS
75
10
= 4.5 V
1
V
-1
GS
= 10 V
10
100
0
SINGLE PULSE
R
10
(
o
θ
C
JA
1
)
125
= 151
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10
100
C
C
C
rss
oss
iss
o
C/W
1000
150
30