FDPC8011S Fairchild Semiconductor, FDPC8011S Datasheet - Page 10

• Manufacturer Part Number: FDPC8011S
• Description: This device includes two specialized N-Channel MOSFETs in a dual package
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDPC8011S Rev.C2
Typical Characteristics
SyncFET
Characteristics
Fairchild’s SyncFET
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverse recovery
characteristic of the FDPC8011S.
35
30
25
20
15
10
-5
5
0
100
diode reverse recovery characteristic
Figure 27. FDPC8011S SyncFET
TM
Schottky body diode
150
TM
process embeds a Schottky diode in
200
TIME (ns)
di/dt = 300 A/
250
(continued)
300
μ
s
350
TM
body
400
10
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
10
10
10
10
10
Figure 28. SyncFET
leakage versus drain-source voltage
-2
-3
-4
-5
-6
0
5
V
DS
, REVERSE VOLTAGE (V)
10
TM
T
T
T
J
J
J
= 125
= 100
= 25
body diode reverse
o
15
o
o
C
C
C
20
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25