BUK9MJJ-65PLL NXP Semiconductors, BUK9MJJ-65PLL Datasheet - Page 7

• Manufacturer Part Number: BUK9MJJ-65PLL
• Description: Dual N-channel enhancement mode field-effect power transistor in SO20
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
BUK9MJJ-65PLL
Product data sheet
Symbol
FET1 and FET2 static characteristics
V
V
I
I
R
I
S
V
DSS
GSS
D
(BR)DSS
GSth
F(TSD)
F(TSD)
DSon
/I
sense
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
ratio of drain current to
sense current
temperature sense
diode temperature
coefficient
temperature sense
diode forward voltage
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
see
V
see
V
see
V
see
V
I
see
I
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
F
F
DS
DS
DS
GS
GS
GS
GS
GS
= 250 µA; 25 °C ≤ T
= 250 µA; T
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure 18
= 52 V; V
= 52 V; V
= 0 V; V
= 4.5 V; I
= 5 V; I
= 5 V; I
= 10 V; I
= 5 V; T
Rev. 03 — 15 July 2010
13; see
13; see
13; see
15; see
15; see
15; see
15; see
D
D
DS
DS
DS
j
GS
D
= 25 °C; see
D
= 10 A; T
= 10 A; T
GS
GS
j
GS
GS
= 10 A; T
= 25 °C; see
= V
= V
= V
= 10 A; T
= 15 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 14
Figure 14
Figure 14
Figure 16
Figure 16
Figure 16
Figure 16
; T
; T
; T
j
j
j
≤ 150 °C;
= 25 °C;
= 150 °C;
j
j
j
j
j
j
j
j
= 25 °C;
= 150 °C;
= -55 °C;
= 25 °C;
j
j
= 25 °C;
= 25 °C
= 150 °C
= 25 °C
= 25 °C
= -55 °C
Figure 17
Figure 18
Dual TrenchPLUS FET Logic Level FET
BUK9MJJ-65PLL
Min
65
59
1
0.5
-
-
-
-
-
-
-
-
4963
-5.4
2.855
Typ
-
-
1.5
-
-
0.02
-
2
-
14.5
-
-
5514
-5.7
2.9
© NXP B.V. 2010. All rights reserved.
Max
-
-
2
-
2.3
3
125
300
18.8
17
32.6
15.5
6065
-6
2.945
Unit
V
V
V
V
V
µA
µA
nA
mΩ
mΩ
mΩ
mΩ
A/A
mV/K
V
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