BUK9MJJ-65PLL NXP Semiconductors, BUK9MJJ-65PLL Datasheet

Dual N-channel enhancement mode field-effect power transistor in SO20

BUK9MJJ-65PLL

Manufacturer Part Number
BUK9MJJ-65PLL
Description
Dual N-channel enhancement mode field-effect power transistor in SO20
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Dual N-channel enhancement mode field-effect power transistor in SO20. Device is
manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring
very low on-state resistance, integrated current sensing transistors and over temperature
protection diodes.
Table 1.
Symbol
FET1 and FET2 static characteristics
R
I
V
D
(BR)DSS
DSon
/I
BUK9MJJ-65PLL
Dual TrenchPLUS FET Logic Level FET
Rev. 03 — 15 July 2010
sense
Integrated current sensors
Lamp switching
Motor drive systems
Quick reference data
Parameter
drain-source
on-state
resistance
ratio of drain
current to sense
current
drain-source
breakdown
voltage
Conditions
V
T
see
T
see
I
T
D
j
j
j
GS
= 25 °C; see
= 25 °C; V
= 250 µA; V
= 25 °C
Figure 16
Figure 17
= 5 V; I
D
GS
= 10 A;
GS
Figure
= 5 V;
= 0 V;
15;
Integrated temperature sensors
Power distribution
Solenoid drivers
Min
-
4963 5514 6065 A/A
65
Product data sheet
Typ
14.5 17
-
Max Unit
-
mΩ
V

Related parts for BUK9MJJ-65PLL

BUK9MJJ-65PLL Summary of contents

Page 1

... BUK9MJJ-65PLL Dual TrenchPLUS FET Logic Level FET Rev. 03 — 15 July 2010 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring very low on-state resistance, integrated current sensing transistors and over temperature protection diodes ...

Page 2

... Graphic symbol SOT163-1 (SO20) Description plastic small outline package; 20 leads; body width 7.5 mm All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 July 2010 BUK9MJJ-65PLL Dual TrenchPLUS FET Logic Level FET FET1 FET2 G1 IS1 S1 KS1 C1 G2 IS2 S2 KS2 C2 ...

Page 3

... HBM 100 pF 1.5 kΩ; pins 3, 16 and 20 to pins 1, 2, 17, 18 and 19 shorted All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 July 2010 BUK9MJJ-65PLL Dual TrenchPLUS FET Logic Level FET Min Max - 65 - ...

Page 4

... AL ( −1 10 −3 −2 − All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 July 2010 BUK9MJJ-65PLL Dual TrenchPLUS FET Logic Level FET 100 150 Normalized total power dissipation as a function of solder point temperature 001aal681 (1) (2) ...

Page 5

... Figure 6 mounted on a printed-circuit board; one channel conducting; 400 mm² copper heat sink area; see Figure 7 All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 July 2010 BUK9MJJ-65PLL Dual TrenchPLUS FET Logic Level FET 001aal758 = 10 μ 100 μ ...

Page 6

... All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 July 2010 BUK9MJJ-65PLL Dual TrenchPLUS FET Logic Level FET PCB used for thermal tests; heat sink area 200 mm² 001aae480 001aal804 t p δ ...

Page 7

... T ≤ 150 ° see Figure 250 µ °C; see Figure All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 July 2010 BUK9MJJ-65PLL Dual TrenchPLUS FET Logic Level FET Min Typ Max 1.5 2 0.5 ...

Page 8

... A/µ - 001aal612 (V) GS Fig 10. Forward transconductance as a function of All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 July 2010 BUK9MJJ-65PLL Dual TrenchPLUS FET Logic Level FET Min Typ = 30.8 - 6.5 - 13.5 - 2660 - 322 - 123 = 5 V; ...

Page 9

... Fig 12. Transfer characteristics; drain current as a 001aal621 V GS(th) max (V) GS Fig 14. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 July 2010 BUK9MJJ-65PLL Dual TrenchPLUS FET Logic Level FET ( 150 ° ° ...

Page 10

... V (V) GS Fig 18. Temperature sense diode forward voltage as a function of junction temperature; typical values, FET1 and FET2 All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 July 2010 BUK9MJJ-65PLL Dual TrenchPLUS FET Logic Level FET 003aae494 2.5 3.0 3.5 4.0 4 ...

Page 11

... 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 July 2010 BUK9MJJ-65PLL Dual TrenchPLUS FET Logic Level FET − function of drain-source voltage; typical values, FET1 and FET2 001aal789 1.5 2.0 V ...

Page 12

... REFERENCES JEDEC JEITA MS-013 All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 July 2010 BUK9MJJ-65PLL Dual TrenchPLUS FET Logic Level FET θ detail ...

Page 13

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK9MJJ-65PLL v.3 20100715 • Modifications: Various changes to content. BUK9MJJ-65PLL v.2 20100618 BUK9MJJ-65PLL Product data sheet Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. ...

Page 14

... All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 July 2010 BUK9MJJ-65PLL Dual TrenchPLUS FET Logic Level FET © NXP B.V. 2010. All rights reserved ...

Page 15

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 July 2010 BUK9MJJ-65PLL Dual TrenchPLUS FET Logic Level FET © NXP B.V. 2010. All rights reserved ...

Page 16

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BUK9MJJ-65PLL All rights reserved. Date of release: 15 July 2010 ...

Related keywords