BUK9MJJ-65PLL NXP Semiconductors, BUK9MJJ-65PLL Datasheet - Page 4

Dual N-channel enhancement mode field-effect power transistor in SO20

BUK9MJJ-65PLL

Manufacturer Part Number
BUK9MJJ-65PLL
Description
Dual N-channel enhancement mode field-effect power transistor in SO20
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
BUK9MJJ-65PLL
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
16
12
8
4
0
solder point temperature, FET1 and FET2
FET2
Continuous drain current as a function of
Single-Pulse and repetitive avalanche rating; avalanche current as a function of avalanche time. FET1 and
0
50
100
I
(A)
AL
10
10
10
−1
150
1
2
10
−3
All information provided in this document is subject to legal disclaimers.
T
sp
001aal611
(°C)
200
10
Rev. 03 — 15 July 2010
−2
10
−1
Fig 2.
P
(%)
120
der
80
40
0
1
function of solder point temperature
Normalized total power dissipation as a
0
t
AL
001aal681
(1)
(2)
(3)
(ms)
Dual TrenchPLUS FET Logic Level FET
10
50
BUK9MJJ-65PLL
100
150
© NXP B.V. 2010. All rights reserved.
003aab388
T
sp
(°C)
200
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