BUK9MJJ-65PLL NXP Semiconductors, BUK9MJJ-65PLL Datasheet - Page 6

Dual N-channel enhancement mode field-effect power transistor in SO20

BUK9MJJ-65PLL

Manufacturer Part Number
BUK9MJJ-65PLL
Description
Dual N-channel enhancement mode field-effect power transistor in SO20
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
BUK9MJJ-65PLL
Product data sheet
Fig 5.
Fig 7.
Fig 8.
PCB used for thermal tests; zero heat sink area
PCB used for thermal tests; heat sink area 400 mm²
Transient thermal impedance from junction to mounting base as a function of pulse duration
Z
th(j-amb)
(K/W)
10
10
10
10
10
−1
−2
−3
1
2
10
−6
δ = 0.5
0.05
0.02
single shot
0.2
0.1
10
−5
10
−4
001aae478
All information provided in this document is subject to legal disclaimers.
10
−3
Rev. 03 — 15 July 2010
10
−2
10
−1
Fig 6.
1
200 mm²
PCB used for thermal tests; heat sink area
001aae480
10
Dual TrenchPLUS FET Logic Level FET
P
10
BUK9MJJ-65PLL
2
t
p
T
10
001aal804
3
δ =
t
p
(s)
t
T
t
p
10
4
© NXP B.V. 2010. All rights reserved.
001aae479
6 of 16

Related parts for BUK9MJJ-65PLL