BUK9MJJ-65PLL NXP Semiconductors, BUK9MJJ-65PLL Datasheet - Page 12

Dual N-channel enhancement mode field-effect power transistor in SO20

BUK9MJJ-65PLL

Manufacturer Part Number
BUK9MJJ-65PLL
Description
Dual N-channel enhancement mode field-effect power transistor in SO20
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
7. Package outline
Fig 22. Package outline SOT163-1 (SO20)
BUK9MJJ-65PLL
Product data sheet
SO20: plastic small outline package; 20 leads; body width 7.5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
inches
UNIT
mm
VERSION
OUTLINE
SOT163-1
max.
2.65
0.1
A
20
1
Z
y
0.012
0.004
A
0.3
0.1
1
pin 1 index
0.096
0.089
2.45
2.25
A
2
075E04
IEC
0.25
0.01
e
A
3
D
0.019
0.014
0.49
0.36
b
p
0.013
0.009
All information provided in this document is subject to legal disclaimers.
0.32
0.23
MS-013
JEDEC
c
0
b
REFERENCES
0.51
0.49
13.0
12.6
D
p
(1)
Rev. 03 — 15 July 2010
11
10
0.30
0.29
E
w
7.6
7.4
(1)
M
JEITA
scale
1.27
0.05
5
e
c
10.65
10.00
0.419
0.394
H
E
A
2
0.055
A
1.4
L
1
10 mm
Dual TrenchPLUS FET Logic Level FET
0.043
0.016
1.1
0.4
L
p
H
E
E
detail X
BUK9MJJ-65PLL
0.043
0.039
1.1
1.0
Q
L
PROJECTION
L
EUROPEAN
p
0.25
0.01
Q
v
(A )
3
0.25
0.01
w
A
θ
A
0.004
0.1
© NXP B.V. 2010. All rights reserved.
y
X
v
ISSUE DATE
M
99-12-27
03-02-19
0.035
0.016
Z
0.9
0.4
A
(1)
SOT163-1
θ
8
0
o
o
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