BUK9MJJ-65PLL NXP Semiconductors, BUK9MJJ-65PLL Datasheet - Page 11

• Manufacturer Part Number: BUK9MJJ-65PLL
• Description: Dual N-channel enhancement mode field-effect power transistor in SO20
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9MJJ-65PLL
Product data sheet
Fig 19. Gate-source voltage as a function of turn-on
Fig 21. Source (diode forward) current as a function of source-drain (diode forward) voltage
V
(V)
GS
5
4
3
2
1
0
gate charge; typical values, FET1 and FET2
0
10
V
DS
= 14 V
20
(A)
V
I
S
DS
60
45
30
15
30
0
= 52 V
0
All information provided in this document is subject to legal disclaimers.
Q
003aae493
G
(nC)
T
j
= 150 °C
40
0.5
Rev. 03 — 15 July 2010
T
1.0
j
= 25 °C
Fig 20. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
1.5
4
3
2
10
as a function of drain-source voltage; typical
values, FET1 and FET2
−1
V
001aal789
SD
Dual TrenchPLUS FET Logic Level FET
(V)
2.0
BUK9MJJ-65PLL
1
10
V
© NXP B.V. 2010. All rights reserved.
DS
001aal624
C
C
C
(V)
oss
rss
iss
10
2
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