ED DDR3 1G PCF8000 Samsung Semiconductor, ED DDR3 1G PCF8000 Datasheet - Page 59

• Manufacturer Part Number: ED DDR3 1G PCF8000
• Manufacturer: Samsung Semiconductor
• Type: DDR3 SDRAMr

Specifications of ED DDR3 1G PCF8000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 20ns
• Maximum Clock Rate: 1.066GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 130mA
• Pin Count: 96
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

K4B1G04(08/16)46E
Figure 26 - Illustration of nominal slew rate for hold time tDH (for DQ with respect to strobe) and tIH
Note :Clock and Strobe are drawn on a different time scale.
(for ADD/CMD with respect to clock).
Hold Slew Rate
V
V
V
V
V
V
Rising Signal
REF
IL
IL
DDQ
IH
IH
(DC) max
(AC) max
(AC) min
(DC) min
(DC)
CK
DQS
DQS
CK
V
SS
dc to V
dc to V
region
region
=
V
REF
REF
REF
(DC) - V
Delta TR
slew rate
tDS
nominal
tIS
IL
Page 59 of 61
(DC)max
tDH
tIH
Delta TR
Hold Slew Rate
Falling Signal
nominal
slew rate
dc to V
region
tDS
tIS
=
V
IH
REF
(DC)min - V
tDH
tIH
Delta TF
Delta TF
1Gb DDR3 SDRAM
REF
Rev. 1.0 February 2009
(DC)