ED DDR3 1G PCF8000 Samsung Semiconductor, ED DDR3 1G PCF8000 Datasheet - Page 55

• Manufacturer Part Number: ED DDR3 1G PCF8000
• Manufacturer: Samsung Semiconductor
• Type: DDR3 SDRAMr

Specifications of ED DDR3 1G PCF8000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 20ns
• Maximum Clock Rate: 1.066GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 130mA
• Pin Count: 96
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

K4B1G04(08/16)46E
Figure 23. Illustration of tangent line for setup time tDS (for DQ with respect to strobe) and tIS
Note :Clock and Strobe are drawn on a different time scale.
(for ADD/CMD with respect to clock)
V
V
V
V
V
V
Setup Slew Rate
IL
IL
REF
DDQ
IH
IH
Falling Signal
(DC) max
(AC) max
(AC) min
(DC) min
(DC)
CK
DQS
DQS
CK
V
nominal
SS
line
V
region
REF
=
Delta TF
tangent line[V
to ac
Delta TF
tDS
tIS
tangent
REF
line
Page 55 of 61
(DC) - V
Setup Slew Rate
tDH
tIH
Rising Signal
IL
(AC)max]
nominal
line
Delta TR
=
tangent line[V
tDS
tIS
tVAC
tangent
line
Delta TR
IH
tDH
tIH
(AC)min - V
V
REF
region
to ac
1Gb DDR3 SDRAM
REF
Rev. 1.0 February 2009
(DC)]