ED DDR3 1G PCF8000 Samsung Semiconductor, ED DDR3 1G PCF8000 Datasheet - Page 38

• Manufacturer Part Number: ED DDR3 1G PCF8000
• Manufacturer: Samsung Semiconductor
• Type: DDR3 SDRAMr

Specifications of ED DDR3 1G PCF8000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 20ns
• Maximum Clock Rate: 1.066GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 130mA
• Pin Count: 96
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

K4B1G04(08/16)46E
11.0 1Gb DDR3 SDRAM E-die IDD Specification Table
[ Table 40 ] IDD Specification for 1Gb DDR3 E-die
IDD2P0(slow exit)
IDD2P0(slow exit)
IDD2P1(fast exit)
IDD2P1(fast exit)
IDD3P(fast exit)
IDD3P(fast exit)
Symbol
IDD2NT
Symbol
IDD2NT
IDD4W
IDD4W
IDD2N
IDD2Q
IDD3N
IDD4R
IDD5B
IDD2N
IDD2Q
IDD3N
IDD4R
IDD5B
IDD0
IDD1
IDD6
IDD7
IDD0
IDD1
IDD6
IDD7
DDR3-800
DDR3-800
6-6-6
6-6-6
150
170
150
170
55
70
10
25
30
30
25
25
40
85
85
10
55
70
10
25
30
30
25
25
40
95
85
10
DDR3-1066
DDR3-1066
7-7-7
7-7-7
100
105
150
180
150
185
110
115
60
75
10
25
30
35
30
25
45
10
60
75
10
25
30
35
30
25
45
10
256Mx4 (K4B1G0446E)
128Mx8 (K4B1G0846E)
Page 38 of 61
DDR3-1333
DDR3-1333
9-9-9
9-9-9
125
160
225
125
135
160
230
115
65
80
10
25
35
40
35
25
50
10
65
80
10
25
35
40
35
25
50
10
1Gb DDR3 SDRAM
DDR3-1600
DDR3-1600
Rev. 1.0 February 2009
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
Notes