ED DDR3 1G PCF8000 Samsung Semiconductor, ED DDR3 1G PCF8000 Datasheet - Page 21

• Manufacturer Part Number: ED DDR3 1G PCF8000
• Manufacturer: Samsung Semiconductor
• Type: DDR3 SDRAMr

Specifications of ED DDR3 1G PCF8000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 20ns
• Maximum Clock Rate: 1.066GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 130mA
• Pin Count: 96
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

K4B1G04(08/16)46E
9.6 Overshoot/Undershoot Specification
9.6.1 Address and Control Overshoot and Undershoot specifications
[ Table 20 ] AC overshoot/undershoot specification for Address and Control pins (A0-A12, BA0-BA2. CS. RAS. CAS. WE. CKE, ODT)
9.6.2 Clock, Data, Strobe and Mask Overshoot and Undershoot Specifications
[ Table 21 ] AC overshoot/undershoot specification for Clock, Data, Strobe and Mask (DQ, DQS, DQS, DM, CK, CK)
Parameter
Maximum peak amplitude allowed for overshoot area (See Figure 9)
Maximum peak amplitude allowed for undershoot area (See Figure 9)
Maximum overshoot area above V
Maximum undershoot area below V
Parameter
Maximum peak amplitude allowed for overshoot area (See Figure 11)
Maximum peak amplitude allowed for undershoot area (See Figure 11)
Maximum overshoot area above V
Maximum undershoot area below V
Volts
(V)
Volts
(V)
V
V
DDQ
SSQ
Figure 10. Clock, Data, Strobe and Mask Overshoot and Undershoot Definition
DD
DDQ
V
V
SS
SSQ
DD
SS
(See Figure 9)
(See Figure 9)
Figure 9. Address and Control Overshoot and Undershoot Definition
(See Figure 11)
(See Figure 11)
Maximum Amplitude
Maximum Amplitude
Maximum Amplitude
Maximum Amplitude
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Time (ns)
DDR3-800
DDR3-800
0.25V-ns
0.25V-ns
0.67V-ns
0.67V-ns
0.4V
0.4V
0.4V
0.4V
Time (ns)
DDR3-1066
DDR3-1066
0.19V-ns
0.19V-ns
0.5V-ns
0.5V-ns
0.4V
0.4V
0.4V
0.4V
Undershoot Area
Overshoot Area
Specification
Specification
Undershoot Area
Overshoot Area
DDR3-1333
DDR3-1333
0.15V-ns
0.15V-ns
0.4V-ns
0.4V-ns
0.4V
0.4V
1Gb DDR3 SDRAM
0.4V
0.4V
Rev. 1.0 February 2009
DDR3-1600
DDR3-1600
0.33V-ns
0.33V-ns
0.13V-ns
0.13V-ns
0.4V
0.4V
0.4V
0.4V
Unit
V-ns
V-ns
Unit
V-ns
V-ns
V
V
V
V