ED DDR3 1G PCF8000 Samsung Semiconductor, ED DDR3 1G PCF8000 Datasheet - Page 4

• Manufacturer Part Number: ED DDR3 1G PCF8000
• Manufacturer: Samsung Semiconductor
• Type: DDR3 SDRAMr

Specifications of ED DDR3 1G PCF8000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 20ns
• Maximum Clock Rate: 1.066GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 130mA
• Pin Count: 96
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

K4B1G04(08/16)46E
11.0 1Gb DDR3 SDRAM E-die IDD Specification Table ................................................................ 38
12.0 Input/Output Capacitance ....................................................................................................... 40
13.0 Electrical Characteristics and AC timing for DDR3-800 to DDR3-1600 .............................. 41
14.0 Timing Parameters by Speed Grade ...................................................................................... 46
13.1 Clock Specification
13.2 Refresh Parameters by Device Density
13.3 Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin
14.1 Jitter Notes
14.2 Timing Parameter Notes
14.3 Address/Command Setup, Hold and Derating :
14.4 Data Setup, Hold and Slew Rate Derating :
13.1.1 Definition for tCK(avg)
13.1.2 Definition for tCK(abs)
13.1.3 Definition for tCH(avg) and tCL(avg)
13.1.4 Definition for note for tJIT(per), tJIT(per, Ick)
13.1.5 Definition for tJIT(cc), tJIT(cc, Ick)
13.1.6 Definition for tERR(nper)
13.3.1 Speed Bin Table Notes
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1Gb DDR3 SDRAM
Rev. 1.0 February 2009