ED DDR3 1G PCF8000 Samsung Semiconductor, ED DDR3 1G PCF8000 Datasheet - Page 30
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ED DDR3 1G PCF8000
Manufacturer Part Number
ED DDR3 1G PCF8000
Description
Manufacturer
Samsung Semiconductor
Type
DDR3 SDRAMr
Datasheet
1.ED_DDR3_1G_PCF8000.pdf
(61 pages)
Specifications of ED DDR3 1G PCF8000
Organization
64Mx16
Density
1Gb
Address Bus
16b
Access Time (max)
20ns
Maximum Clock Rate
1.066GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
130mA
Pin Count
96
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
K4B1G04(08/16)46E
Figure 20. Correlation from simulated Channel IO Power to actual Channel IO Power supported by IDDQ Measurement.
[Note: DIMM level Output test load condition may be different from above]
Application specific
Channel IO Power
memory channel
RESET
CK/CK
CKE
CS
RAS, CAS, WE
A, BA
ODT
ZQ
environment
Figure 19. Measurement Setup and Test Load for IDD and IDDQ (optional) Measurements
Channel
IO Power
Simulation
Number
V
V
DD
SS
I
DD
Correction
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TDQS, TDQS
V
V
DQS, DQS
DDQ
SSQ
DQ, DM,
I
DDQ
(optional)
Simulation
IDDQ
R
TT
= 25 Ohm
IDDQ
Test Load
V
DDQ
/2
1Gb DDR3 SDRAM
Correlation
Rev. 1.0 February 2009
Measurement
IDDQ