H5TQ2G63BFR-H9C HYNIX SEMICONDUCTOR, H5TQ2G63BFR-H9C Datasheet - Page 89

• Manufacturer Part Number: H5TQ2G63BFR-H9C
• Description: 58T1898
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H5TQ2G63BFR-H9C

• Memory Type: SDRAM
• Memory Configuration: 128M X 16
• Access Time: 13.5ns
• Interface Type: CMOS
• Memory Case Style: FBGA
• No. Of Pins: 96
• Operating Temperature Range: 0°C To +85°C
• Memory Size: 2 Gbit
• Rohs Compliant: Yes

Rev. 0.5 / Aug. 2010
Figure 7 - Illustration of nominal slew rate and t
t
IS
Setup Slew Rate
Note: Clock and Strobe are drawn
(for ADD/CMD with respect to clock).
Falling Signal
V
V
V
V
on a different time scale.
V
IL(ac)
IL(dc)
REF(dc)
IH(dc)
IH(ac)
V
DDQ
DQS
DQS
CK
max
max
CK
min
min
V
SS
=
VREF to ac
V
region
REF(dc)
Δ
TF
ΔTF
- V
tDS
IL(ac)
tIS
tVAC
nominal
slew rate
max
tDH
VAC
tIH
for hold setup t
Setup Slew Rate
Rising Signal
Δ
TR
DS
(for DQ with respect to strobe) and
tVAC
tIS
tDS
nominal
slew rate
=
V
IH(ac)
tIH
tDH
VREF to ac
min - V
region
H5TQ2G63BFR
ΔTR
REF(dc)
89