H5TQ2G63BFR-H9C HYNIX SEMICONDUCTOR, H5TQ2G63BFR-H9C Datasheet - Page 49

• Manufacturer Part Number: H5TQ2G63BFR-H9C
• Description: 58T1898
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H5TQ2G63BFR-H9C

• Memory Type: SDRAM
• Memory Configuration: 128M X 16
• Access Time: 13.5ns
• Interface Type: CMOS
• Memory Case Style: FBGA
• No. Of Pins: 96
• Operating Temperature Range: 0°C To +85°C
• Memory Size: 2 Gbit
• Rohs Compliant: Yes

Rev. 0.5 / Aug. 2010
Apply VIH (ac) to pin under test and measure current I(VIH (ac)), then apply VIL (ac) to pin under test and measure cur-
rent I(VIL (ac)) respectively.
Measurement definition for VM and DVM:
Measure voltage (VM) at test pin (midpoint) with no load:
7.5.3 ODT Temperature and Voltage sensitivity
If temperature and/or voltage change after calibration, the tolerance limits widen according to Table and Table .
DT = T - T (@calibration); DV= VDDQ - VDDQ (@calibration); VDD = VDDQ
ODT Sensitivity Definition
ODT Voltage and Temperature Sensitivity
These parameters may not be subject to production test. They are verified by design and characterization
Δ
RTT
V M
dR
dR
TT
TT
=
dV
dT
⎛
⎝
2 V M
----------------- - 1
V DDQ
•
0.9 - dR
–
TT
dT*|ΔT| - dR
⎞
⎠
RTT
•
min
100
min
0
0
=
TT
dV*|ΔV|
-------------------------------------------------------- -
I(VIH(ac)) I(VIL(ac))
V IH(ac) V IL(ac)
–
–
1.6 + dR
TT
max
0.15
1.5
dT*|ΔT| + dR
max
TT
dV*|ΔV|
H5TQ2G63BFR
%/mV
%/
unit
RZQ/2,4,6,8,12
o
C
unit
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