H5TQ2G63BFR-H9C HYNIX SEMICONDUCTOR, H5TQ2G63BFR-H9C Datasheet - Page 61

• Manufacturer Part Number: H5TQ2G63BFR-H9C
• Description: 58T1898
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H5TQ2G63BFR-H9C

• Memory Type: SDRAM
• Memory Configuration: 128M X 16
• Access Time: 13.5ns
• Interface Type: CMOS
• Memory Case Style: FBGA
• No. Of Pins: 96
• Operating Temperature Range: 0°C To +85°C
• Memory Size: 2 Gbit
• Rohs Compliant: Yes

Rev. 0.5 / Aug. 2010
Table 5 - IDD2N and IDD3N Measurement-Loop Pattern
a) DM must be driven LOW all the time. DQS, DQS are FLOATING.
b) DQ signals are FLOATING.
Table 6 - IDD2NT and IDDQ2NT Measurement-Loop Pattern
a) DM must be driven LOW all the time. DQS, DQS are FLOATING.
b) DQ signals are FLOATING.
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4-7
8-11
12-15
16-19
20-23
24-17
28-31
0
1
2
3
4-7
8-11
12-15
16-19
20-23
24-17
28-31
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 1
repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 2
repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 3
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 4
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 5
repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 6
repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 7
repeat Sub-Loop 0, use BA[2:0] = 1 instead
repeat Sub-Loop 0, use BA[2:0] = 2 instead
repeat Sub-Loop 0, use BA[2:0] = 3 instead
repeat Sub-Loop 0, use BA[2:0] = 4 instead
repeat Sub-Loop 0, use BA[2:0] = 5 instead
repeat Sub-Loop 0, use BA[2:0] = 6 instead
repeat Sub-Loop 0, use BA[2:0] = 7 instead
D
D
D
D
D
D
D
D
1
1
1
1
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
a)
a)
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
F
F
F
F
0
0
H5TQ2G63BFR
0
0
0
0
0
0
0
0
00000000
Data
Data
-
-
-
-
-
-
-
b)
b)
61